{113} Defect-engineered silicon light-emitting diodes

G. Z. Pan; R. P. Ostroumov; Y. G. Lian; K. N. Tu; K. L. Wang

{113} Defect-engineered silicon light-emitting diodes

G. Z. Pan, R. P. Ostroumov, Y. G. Lian, K. N. Tu, K. L. Wang

電機資訊學院

研究成果: Conference article › 同行評審

17 引文斯高帕斯（Scopus）

摘要

We correlated electroluminescence of p-n junction silicon light-emitting diodes (Si LEDs) with boron implant-induced defects and found that {113} defects other than dislocation loops result in strong silicon light emissions. The electroluminescence of {113} defect engineered Si LEDs is twenty-five times higher than dislocation loop engineered Si LEDs. This finding, for the first time, is highly significant for monolithic Si nanophotonics.

原文	English
頁（從 - 到）	343-346
頁數	4
期刊	Technical Digest - International Electron Devices Meeting, IEDM
出版狀態	Published - 2004
事件	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States 持續時間: 2004 12月 13 → 2004 12月 15

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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引用此

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abstract = "We correlated electroluminescence of p-n junction silicon light-emitting diodes (Si LEDs) with boron implant-induced defects and found that {113} defects other than dislocation loops result in strong silicon light emissions. The electroluminescence of {113} defect engineered Si LEDs is twenty-five times higher than dislocation loop engineered Si LEDs. This finding, for the first time, is highly significant for monolithic Si nanophotonics.",

author = "Pan, {G. Z.} and Ostroumov, {R. P.} and Lian, {Y. G.} and Tu, {K. N.} and Wang, {K. L.}",

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T1 - {113} Defect-engineered silicon light-emitting diodes

AU - Pan, G. Z.

AU - Ostroumov, R. P.

AU - Lian, Y. G.

AU - Tu, K. N.

AU - Wang, K. L.

PY - 2004

Y1 - 2004

N2 - We correlated electroluminescence of p-n junction silicon light-emitting diodes (Si LEDs) with boron implant-induced defects and found that {113} defects other than dislocation loops result in strong silicon light emissions. The electroluminescence of {113} defect engineered Si LEDs is twenty-five times higher than dislocation loop engineered Si LEDs. This finding, for the first time, is highly significant for monolithic Si nanophotonics.

AB - We correlated electroluminescence of p-n junction silicon light-emitting diodes (Si LEDs) with boron implant-induced defects and found that {113} defects other than dislocation loops result in strong silicon light emissions. The electroluminescence of {113} defect engineered Si LEDs is twenty-five times higher than dislocation loop engineered Si LEDs. This finding, for the first time, is highly significant for monolithic Si nanophotonics.

UR - http://www.scopus.com/inward/record.url?scp=21644450504&partnerID=8YFLogxK

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M3 - Conference article

AN - SCOPUS:21644450504

SN - 0163-1918

SP - 343

EP - 346

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

{113} Defect-engineered silicon light-emitting diodes

摘要

All Science Journal Classification (ASJC) codes

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