{113} Defect-engineered silicon light-emitting diodes

G. Z. Pan, R. P. Ostroumov, Y. G. Lian, K. N. Tu, K. L. Wang

研究成果: Conference article同行評審

17 引文 斯高帕斯(Scopus)


We correlated electroluminescence of p-n junction silicon light-emitting diodes (Si LEDs) with boron implant-induced defects and found that {113} defects other than dislocation loops result in strong silicon light emissions. The electroluminescence of {113} defect engineered Si LEDs is twenty-five times higher than dislocation loop engineered Si LEDs. This finding, for the first time, is highly significant for monolithic Si nanophotonics.

頁(從 - 到)343-346
期刊Technical Digest - International Electron Devices Meeting, IEDM
出版狀態Published - 2004
事件IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
持續時間: 2004 12月 132004 12月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學


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