1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE

H. C. Yu, Y. K. Su, S. J. Chang, K. F. Lin, J. M. Wang, J. Y. Chi, R. S. Hsiao

研究成果: Article

41 引文 斯高帕斯(Scopus)

摘要

We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.

原文English
頁(從 - 到)418-420
頁數3
期刊IEEE Photonics Technology Letters
18
發行號2
DOIs
出版狀態Published - 2006 一月 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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