1.3 μm InAs quantum dot resonant cavity light emitting diodes

Y. K. Su, H. C. Yu, S. J. Chang, C. T. Lee, J. S. Wang, A. R. Kovsh, Y. T. Wu, K. F. Lin, C. Y. Huang

研究成果: Article

4 引文 斯高帕斯(Scopus)

摘要

Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.

原文English
頁(從 - 到)256-259
頁數4
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
110
發行號3
DOIs
出版狀態Published - 2004 七月 25

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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