TY - JOUR
T1 - 1.5-V 6-10 GHz broadband CMOS LNA and transmitting amplifier for DS-UWB radio
AU - Huang, Jhin Fang
AU - Chuang, Huey Ru
AU - Lai, Wen Cheng
PY - 2011/11
Y1 - 2011/11
N2 - A 6-10-GHz broadband low noise amplifier (LNA) and transmitting amplifier (TA) for direct sequence ultra-wideband (DS-UWB) are presented. The LNA and TA are fabricated with the 0.18-μm 1P6M standard CMOS process. The CMOS LNA and TA are checked by onwafer measurement with the DC supply voltage of 1.5V. From 6-10 GHz, the broadband LNA exhibits a noise figure of 5.3-6.2 dB, a gain of 11- 13.8 dB, a P1 dB of -15.7- -10.8 dBm, a IIP3 of -5.5- -1 dBm, a DC power consumption of 12mW, and an input/output return loss higher than 11/12 dB, respectively. From 6-10 GHz, the broadband TA exhibits a gain of 7.6-10.5 dB, a OP1 dB of 2.8-6.1 dBm, a OIP3 of 12.3-15.1 dBm, and a PAE of 8.8-17.6% @ OP1 dB, and a of 9.7-21.1% @ OP1 dB, and an input/output return loss higher than 6.8/3.2 dB, respectively.
AB - A 6-10-GHz broadband low noise amplifier (LNA) and transmitting amplifier (TA) for direct sequence ultra-wideband (DS-UWB) are presented. The LNA and TA are fabricated with the 0.18-μm 1P6M standard CMOS process. The CMOS LNA and TA are checked by onwafer measurement with the DC supply voltage of 1.5V. From 6-10 GHz, the broadband LNA exhibits a noise figure of 5.3-6.2 dB, a gain of 11- 13.8 dB, a P1 dB of -15.7- -10.8 dBm, a IIP3 of -5.5- -1 dBm, a DC power consumption of 12mW, and an input/output return loss higher than 11/12 dB, respectively. From 6-10 GHz, the broadband TA exhibits a gain of 7.6-10.5 dB, a OP1 dB of 2.8-6.1 dBm, a OIP3 of 12.3-15.1 dBm, and a PAE of 8.8-17.6% @ OP1 dB, and a of 9.7-21.1% @ OP1 dB, and an input/output return loss higher than 6.8/3.2 dB, respectively.
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U2 - 10.1587/transele.E94.C.1807
DO - 10.1587/transele.E94.C.1807
M3 - Article
AN - SCOPUS:81255140914
VL - E94-C
SP - 1807
EP - 1810
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
SN - 0916-8524
IS - 11
ER -