1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes

Shoou-Jinn Chang, Deepak K. Nayak, Yasuhiro Shiraki

研究成果: Article

10 引文 斯高帕斯(Scopus)

摘要

Er-doped SiGe LEDS were fabricated and the electroluminescent (EL) characteristics were studied. By injecting minority carriers into the diodes, Er3+-related electroluminescence was observed at 77 K in the 1.54 μm region which corresponds to the Er3+ 4I13/24I15/2 4f shell transitions. The optimum annealing condition to achieve the maximum EL intensity is to anneal the implanted sample at 800°C for 30 min under vacuum.

原文English
頁(從 - 到)1426-1428
頁數3
期刊Journal of Applied Physics
83
發行號3
DOIs
出版狀態Published - 1998 二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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