Er-doped SiGe LEDS were fabricated and the electroluminescent (EL) characteristics were studied. By injecting minority carriers into the diodes, Er3+-related electroluminescence was observed at 77 K in the 1.54 μm region which corresponds to the Er3+ 4I13/2 → 4I15/2 4f shell transitions. The optimum annealing condition to achieve the maximum EL intensity is to anneal the implanted sample at 800°C for 30 min under vacuum.
All Science Journal Classification (ASJC) codes
- 物理與天文學 (全部)