@inproceedings{376424c7f9544557ae29c71b0616d11f,
title = "2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features",
abstract = "The Ge/Si heterojunction MOS LED can emit ∼2 μm light due to the radiative recombination at type II heterojunction. The fully depleted 800 nm germanium on insulator (GOI) can increase the responsivity and the speed of the MOS detector due to the large absorption of Ge and the electrical field in the active layer, respectively. Moreover, the external strain can tune the emission energy (∼11 meV) by modifying the band structure. The responsivity of GOI MOS detector is also improved by ∼10% using the external strain. Both heterojunction and strain (internal or external) can enhance the performance of Si-based optoelectronics.",
author = "Liao, {M. H.} and Yu, {C. Y.} and Huang, {C. F.} and Lin, {C. H.} and Lee, {C. J.} and Yu, {M. H.} and Chang, {S. T.} and Liang, {C. Y.} and Lee, {C. Y.} and Guo, {T. H.} and Chang, {C. C.} and Liu, {C. W.}",
note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",
year = "2005",
language = "English",
isbn = "078039268X",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "1001--1004",
booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",
}