2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features

M. H. Liao, C. Y. Yu, C. F. Huang, C. H. Lin, C. J. Lee, M. H. Yu, S. T. Chang, C. Y. Liang, C. Y. Lee, T. H. Guo, C. C. Chang, C. W. Liu

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The Ge/Si heterojunction MOS LED can emit ∼2 μm light due to the radiative recombination at type II heterojunction. The fully depleted 800 nm germanium on insulator (GOI) can increase the responsivity and the speed of the MOS detector due to the large absorption of Ge and the electrical field in the active layer, respectively. Moreover, the external strain can tune the emission energy (∼11 meV) by modifying the band structure. The responsivity of GOI MOS detector is also improved by ∼10% using the external strain. Both heterojunction and strain (internal or external) can enhance the performance of Si-based optoelectronics.

原文English
主出版物標題IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
頁面1001-1004
頁數4
出版狀態Published - 2005
事件IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
持續時間: 2005 十二月 52005 十二月 7

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2005
ISSN(列印)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
國家United States
城市Washington, DC, MD
期間05-12-0505-12-07

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

指紋 深入研究「2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features」主題。共同形成了獨特的指紋。

引用此