2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features

M. H. Liao; C. Y. Yu; C. F. Huang; C. H. Lin; C. J. Lee; M. H. Yu; S. T. Chang; C. Y. Liang; C. Y. Lee; T. H. Guo; C. C. Chang; C. W. Liu

2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features

M. H. Liao, C. Y. Yu, C. F. Huang, C. H. Lin, C. J. Lee, M. H. Yu, S. T. Chang, C. Y. Liang, C. Y. Lee, T. H. Guo, C. C. Chang, C. W. Liu

光電科學與工程學系

研究成果: Conference contribution

2 引文斯高帕斯（Scopus）

摘要

The Ge/Si heterojunction MOS LED can emit ∼2 μm light due to the radiative recombination at type II heterojunction. The fully depleted 800 nm germanium on insulator (GOI) can increase the responsivity and the speed of the MOS detector due to the large absorption of Ge and the electrical field in the active layer, respectively. Moreover, the external strain can tune the emission energy (∼11 meV) by modifying the band structure. The responsivity of GOI MOS detector is also improved by ∼10% using the external strain. Both heterojunction and strain (internal or external) can enhance the performance of Si-based optoelectronics.

原文	English
主出版物標題	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
頁面	1001-1004
頁數	4
出版狀態	Published - 2005
事件	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States 持續時間: 2005 十二月 5 → 2005 十二月 7

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2005
ISSN（列印）	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
國家	United States
城市	Washington, DC, MD
期間	05-12-05 → 05-12-07

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Liao, M. H., Yu, C. Y., Huang, C. F., Lin, C. H., Lee, C. J., Yu, M. H., Chang, S. T., Liang, C. Y., Lee, C. Y., Guo, T. H., Chang, C. C., & Liu, C. W. (2005). 2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features. 於 IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (頁 1001-1004). [1609532] (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2005).

Liao, M. H. ; Yu, C. Y. ; Huang, C. F. ; Lin, C. H. ; Lee, C. J. ; Yu, M. H. ; Chang, S. T. ; Liang, C. Y. ; Lee, C. Y. ; Guo, T. H. ; Chang, C. C. ; Liu, C. W. / 2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features. IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. 頁 1001-1004 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{376424c7f9544557ae29c71b0616d11f,

title = "2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features",

abstract = "The Ge/Si heterojunction MOS LED can emit ∼2 μm light due to the radiative recombination at type II heterojunction. The fully depleted 800 nm germanium on insulator (GOI) can increase the responsivity and the speed of the MOS detector due to the large absorption of Ge and the electrical field in the active layer, respectively. Moreover, the external strain can tune the emission energy (∼11 meV) by modifying the band structure. The responsivity of GOI MOS detector is also improved by ∼10% using the external strain. Both heterojunction and strain (internal or external) can enhance the performance of Si-based optoelectronics.",

author = "Liao, {M. H.} and Yu, {C. Y.} and Huang, {C. F.} and Lin, {C. H.} and Lee, {C. J.} and Yu, {M. H.} and Chang, {S. T.} and Liang, {C. Y.} and Lee, {C. Y.} and Guo, {T. H.} and Chang, {C. C.} and Liu, {C. W.}",

year = "2005",

language = "English",

isbn = "078039268X",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "1001--1004",

booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",

}

Liao, MH, Yu, CY, Huang, CF, Lin, CH, Lee, CJ, Yu, MH, Chang, ST, Liang, CY, Lee, CY, Guo, TH, Chang, CC & Liu, CW 2005, 2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features. 於 IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609532, Technical Digest - International Electron Devices Meeting, IEDM, 卷 2005, 頁 1001-1004, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05-12-05.

2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features. / Liao, M. H.; Yu, C. Y.; Huang, C. F.; Lin, C. H.; Lee, C. J.; Yu, M. H.; Chang, S. T.; Liang, C. Y.; Lee, C. Y.; Guo, T. H.; Chang, C. C.; Liu, C. W.

IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 1001-1004 1609532 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2005).

研究成果: Conference contribution

TY - GEN

T1 - 2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features

AU - Liao, M. H.

AU - Yu, C. Y.

AU - Huang, C. F.

AU - Lin, C. H.

AU - Lee, C. J.

AU - Yu, M. H.

AU - Chang, S. T.

AU - Liang, C. Y.

AU - Lee, C. Y.

AU - Guo, T. H.

AU - Chang, C. C.

AU - Liu, C. W.

PY - 2005

Y1 - 2005

N2 - The Ge/Si heterojunction MOS LED can emit ∼2 μm light due to the radiative recombination at type II heterojunction. The fully depleted 800 nm germanium on insulator (GOI) can increase the responsivity and the speed of the MOS detector due to the large absorption of Ge and the electrical field in the active layer, respectively. Moreover, the external strain can tune the emission energy (∼11 meV) by modifying the band structure. The responsivity of GOI MOS detector is also improved by ∼10% using the external strain. Both heterojunction and strain (internal or external) can enhance the performance of Si-based optoelectronics.

AB - The Ge/Si heterojunction MOS LED can emit ∼2 μm light due to the radiative recombination at type II heterojunction. The fully depleted 800 nm germanium on insulator (GOI) can increase the responsivity and the speed of the MOS detector due to the large absorption of Ge and the electrical field in the active layer, respectively. Moreover, the external strain can tune the emission energy (∼11 meV) by modifying the band structure. The responsivity of GOI MOS detector is also improved by ∼10% using the external strain. Both heterojunction and strain (internal or external) can enhance the performance of Si-based optoelectronics.

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UR - http://www.scopus.com/inward/citedby.url?scp=33847757474&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847757474

SN - 078039268X

SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 1001

EP - 1004

BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

Y2 - 5 December 2005 through 7 December 2005

ER -