2-D-3-D switchable gate driver circuit for TFT-LCD applications

Chih Lung Lin, Mao Hsun Cheng, Chun Da Tu, Chia Che Hung, Jhin Yu Li

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)


This paper presents a novel 2-D-3-D switchable gate driver circuit for active-matrix liquid crystal displays (AMLCDs) applications using the hydrogenated amorphous silicon (a-Si:H) technology. While consisting of 12 thin-film transistors (TFTs), the proposed gate driver circuit includes a pull-up circuit, two alternative circuits, and a key pull-down circuit. To provide a stable output waveform for switching between the 2-D and 3-D modes in AMLCD panel, the proposed circuit can improve the threshold voltage shift of a-Si:H TFT using reversed bias stress. Based on a real circuit integrated on glass with a standard fivemask process applied to a large-sized FHD TFT-LCD panel, the layout area of each gate driver circuit is 359.25 μm × 2296.25 μm. In addition, the power consumption of a 12-stage gate driver circuit is 3.25 and 7.21 mW, while operating at 2-D and 3-D modes, respectively. Measurement results indicate that the output waveform, including output voltage, rising time, and falling time can be stabilized and made almost equal to the initial state after the reliability test at 100 °C over 240 h.

頁(從 - 到)2098-2105
期刊IEEE Transactions on Electron Devices
出版狀態Published - 2014 6月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程


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