TY - JOUR
T1 - 2-Methyl-9,10-bis(naphthalen-2-yl)anthracene doped rubidium carbonate as an effective electron injecting interlayer on indium-tin oxide cathode in inverted bottom-emission organic light-emitting diodes
AU - Tsai, Chi Ting
AU - Kao, Po Ching
AU - Chu, Sheng Yuan
N1 - Publisher Copyright:
© 2018 Author(s).
PY - 2018/8/14
Y1 - 2018/8/14
N2 - 2-Methyl-9,10-bis(naphthalen-2-yl)anthracene doped rubidium carbonate (MADN:Rb2CO3) is used as an effective electron injecting interlayer on an indium-tin oxide (ITO) cathode for inverted bottom-emission organic light-emitting diodes (IBOLEDs). At a Rb2CO3 doping concentration of 20% in MADN, the device exhibits enhanced characteristics, some of which are turn-on voltage, luminance at a given current density, and current efficiency. The attained performance is better than that of the device using lithium fluoride (LiF) as an n-type dopant. Space-charge-limited current acknowledges improved electrical properties of Rb2CO3 doped MADN. Ultraviolet and X-ray photoelectron spectroscopy investigation unveils an interfacial dipole layer induced by charge transfer between Rb2CO3 and ITO, leading to a lowered ITO work function and an electron injection barrier. The improved electron injection and transport capabilities contribute to better charge balance in IBOLED, thus resulting in advanced luminance efficiency. In addition, the morphology stability of organic films is also amended, which benefits long-term reliability under operationally induced thermal stress. Moreover, the effectiveness of using Rb2CO3:MADN as an electron injecting layer for IBOLEDs is superior to many of its alkali-based counterparts demonstrated in the literature, with high compatibility with different types of sophisticated ITO-based IBOLEDs.
AB - 2-Methyl-9,10-bis(naphthalen-2-yl)anthracene doped rubidium carbonate (MADN:Rb2CO3) is used as an effective electron injecting interlayer on an indium-tin oxide (ITO) cathode for inverted bottom-emission organic light-emitting diodes (IBOLEDs). At a Rb2CO3 doping concentration of 20% in MADN, the device exhibits enhanced characteristics, some of which are turn-on voltage, luminance at a given current density, and current efficiency. The attained performance is better than that of the device using lithium fluoride (LiF) as an n-type dopant. Space-charge-limited current acknowledges improved electrical properties of Rb2CO3 doped MADN. Ultraviolet and X-ray photoelectron spectroscopy investigation unveils an interfacial dipole layer induced by charge transfer between Rb2CO3 and ITO, leading to a lowered ITO work function and an electron injection barrier. The improved electron injection and transport capabilities contribute to better charge balance in IBOLED, thus resulting in advanced luminance efficiency. In addition, the morphology stability of organic films is also amended, which benefits long-term reliability under operationally induced thermal stress. Moreover, the effectiveness of using Rb2CO3:MADN as an electron injecting layer for IBOLEDs is superior to many of its alkali-based counterparts demonstrated in the literature, with high compatibility with different types of sophisticated ITO-based IBOLEDs.
UR - http://www.scopus.com/inward/record.url?scp=85051456752&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85051456752&partnerID=8YFLogxK
U2 - 10.1063/1.5040455
DO - 10.1063/1.5040455
M3 - Article
AN - SCOPUS:85051456752
SN - 0021-8979
VL - 124
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 6
M1 - 065703
ER -