20.63 % nPERT cells and 20% PR gain bifacial module

Shu Hung Yu, Chih Jeng Huang, Po Tsung Hsieh, Hung Chih Chang, Wei Cheng Mo, Zih Wei Peng, Chun Wen Lai, Chi Chun Li

研究成果: Conference contribution

7 引文 斯高帕斯(Scopus)

摘要

In this study, comprehensive efforts were conducted to improve conversion efficiency for n-type passivated emitter, rear totally-diffused (nPERT) cells. Key technologies such as boron emitter, phosphorous back surface field (BSF), KOH texturization, and metallization were all investigated and optimized. nPERT cells with 20.63 % efficiency were successfully produced with processes based on homogeneous diffusion and screen-printed metallization. To our knowledge, this is the highest demonstrated efficiency for nPERT cells using boron diffusion. Additionally, we report outdoor performance of a bifacial module made with our nPERT cells, which indicates a performance ratio (PR) gain of more than 20% compared with a conventional p-type module.

原文English
主出版物標題2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面2134-2137
頁數4
ISBN(電子)9781479943982
DOIs
出版狀態Published - 2014 十月 15
事件40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
持續時間: 2014 六月 82014 六月 13

出版系列

名字2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
國家/地區United States
城市Denver
期間14-06-0814-06-13

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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