TY - GEN
T1 - 20.63 % nPERT cells and 20% PR gain bifacial module
AU - Yu, Shu Hung
AU - Huang, Chih Jeng
AU - Hsieh, Po Tsung
AU - Chang, Hung Chih
AU - Mo, Wei Cheng
AU - Peng, Zih Wei
AU - Lai, Chun Wen
AU - Li, Chi Chun
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - In this study, comprehensive efforts were conducted to improve conversion efficiency for n-type passivated emitter, rear totally-diffused (nPERT) cells. Key technologies such as boron emitter, phosphorous back surface field (BSF), KOH texturization, and metallization were all investigated and optimized. nPERT cells with 20.63 % efficiency were successfully produced with processes based on homogeneous diffusion and screen-printed metallization. To our knowledge, this is the highest demonstrated efficiency for nPERT cells using boron diffusion. Additionally, we report outdoor performance of a bifacial module made with our nPERT cells, which indicates a performance ratio (PR) gain of more than 20% compared with a conventional p-type module.
AB - In this study, comprehensive efforts were conducted to improve conversion efficiency for n-type passivated emitter, rear totally-diffused (nPERT) cells. Key technologies such as boron emitter, phosphorous back surface field (BSF), KOH texturization, and metallization were all investigated and optimized. nPERT cells with 20.63 % efficiency were successfully produced with processes based on homogeneous diffusion and screen-printed metallization. To our knowledge, this is the highest demonstrated efficiency for nPERT cells using boron diffusion. Additionally, we report outdoor performance of a bifacial module made with our nPERT cells, which indicates a performance ratio (PR) gain of more than 20% compared with a conventional p-type module.
UR - http://www.scopus.com/inward/record.url?scp=84912101454&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912101454&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925347
DO - 10.1109/PVSC.2014.6925347
M3 - Conference contribution
AN - SCOPUS:84912101454
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 2134
EP - 2137
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -