TY - GEN
T1 - 28 GHz VCO Using Magnetically Tuning Trifilar Transformer in Cryogenic CMOS Application
AU - Hsu, Tai Jung
AU - Hong, Jhih Hao
AU - Cheng, Kuang Wei
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This paper introduces a cryogenic CMOS voltage-controlled oscillator (VCO) to generate the control signal for spintronic qubits in quantum computing applications. The proposed VCO utilizes a magnetically tuning trifilar transformer to achieve large output swing, low phase noise, and low power consumption. The tertiary coil of the trifilar transformer is applied to tune the primary and the secondary resonance frequency simultaneously to suppress the flicker noise up-conversion. In addition, switching the bias voltage of the center tap in the tertiary coil can achieve a wide tuning range. Fabricated in TSMC 40 nm CMOS process, the 28.3-to-31.4 GHz VCO consumes 5.4 mW under 0.6-V supply voltage, and achieves phase noise of -96.8 dBc/Hz at 1-MHz offset at room temperature (300K). When operating at 4K, the VCO operational frequency is slightly higher, from 29.1 GHz to 33.1 GHz, with a power consumption of 5.6 mW.
AB - This paper introduces a cryogenic CMOS voltage-controlled oscillator (VCO) to generate the control signal for spintronic qubits in quantum computing applications. The proposed VCO utilizes a magnetically tuning trifilar transformer to achieve large output swing, low phase noise, and low power consumption. The tertiary coil of the trifilar transformer is applied to tune the primary and the secondary resonance frequency simultaneously to suppress the flicker noise up-conversion. In addition, switching the bias voltage of the center tap in the tertiary coil can achieve a wide tuning range. Fabricated in TSMC 40 nm CMOS process, the 28.3-to-31.4 GHz VCO consumes 5.4 mW under 0.6-V supply voltage, and achieves phase noise of -96.8 dBc/Hz at 1-MHz offset at room temperature (300K). When operating at 4K, the VCO operational frequency is slightly higher, from 29.1 GHz to 33.1 GHz, with a power consumption of 5.6 mW.
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U2 - 10.1109/ISCAS58744.2024.10557857
DO - 10.1109/ISCAS58744.2024.10557857
M3 - Conference contribution
AN - SCOPUS:85198517354
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - ISCAS 2024 - IEEE International Symposium on Circuits and Systems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE International Symposium on Circuits and Systems, ISCAS 2024
Y2 - 19 May 2024 through 22 May 2024
ER -