35-GHz intrinsic bandwidth for direct modulation in 1.3-μm semiconductor lasers subject to strong injection locking

S. K. Hwang; J. M. Liu; J. K. White

doi:10.1109/LPT.2004.824627

35-GHz intrinsic bandwidth for direct modulation in 1.3-μm semiconductor lasers subject to strong injection locking

S. K. Hwang, J. M. Liu, J. K. White

光電科學與工程學系

研究成果: Article › 同行評審

85 引文斯高帕斯（Scopus）

摘要

Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system. The achieved bandwidth approaches the maximum modulation bandwidth set by the K factor for the free-running laser. Discussions are presented for an even larger modulation bandwidth using the injection-locking technique.

原文	English
頁（從 - 到）	972-974
頁數	3
期刊	IEEE Photonics Technology Letters
卷	16
發行號	4
DOIs	https://doi.org/10.1109/LPT.2004.824627
出版狀態	Published - 2004 四月 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.824627

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