35-GHz intrinsic bandwidth for direct modulation in 1.3-μm semiconductor lasers subject to strong injection locking

S. K. Hwang, J. M. Liu, J. K. White

研究成果: Article同行評審

85 引文 斯高帕斯(Scopus)

摘要

Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system. The achieved bandwidth approaches the maximum modulation bandwidth set by the K factor for the free-running laser. Discussions are presented for an even larger modulation bandwidth using the injection-locking technique.

原文English
頁(從 - 到)972-974
頁數3
期刊IEEE Photonics Technology Letters
16
發行號4
DOIs
出版狀態Published - 2004 四月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

指紋 深入研究「35-GHz intrinsic bandwidth for direct modulation in 1.3-μm semiconductor lasers subject to strong injection locking」主題。共同形成了獨特的指紋。

引用此