@article{99568e65736f469da1a3cd528d08b11a,
title = "35-GHz intrinsic bandwidth for direct modulation in 1.3-μm semiconductor lasers subject to strong injection locking",
abstract = "Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system. The achieved bandwidth approaches the maximum modulation bandwidth set by the K factor for the free-running laser. Discussions are presented for an even larger modulation bandwidth using the injection-locking technique.",
author = "Hwang, {S. K.} and Liu, {J. M.} and White, {J. K.}",
note = "Funding Information: Manuscript received June 30, 2003; revised September 18, 2003. This work was supported by the U.S. Army Research Office under Contract DAAG55-98-1-0269. S. K. Hwang is with the Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi, Taiwan, R.O.C. J. M. Liu is with the Department of Electrical Engineering, University of California Los Angeles, Los Angeles, CA 90095-159410 USA (e-mail: liu@ee.ucla.edu). J. K. White is with Bookham Technology, Kanata, ON K2K 2B5, Canada. Digital Object Identifier 10.1109/LPT.2004.824627 Fig. 1. Schematic of the experimental apparatus. L: Lens. BS: Beam splitter. M: Mirror. VA: Variable attenuator. OI: Optical isolator. AO: Acoustooptic modulator. FC: Fiber coupler. PD: Photodiode. OSA: Optical spectrum analyzer. MSA: Microwave/RF spectrum analyzer.",
year = "2004",
month = apr,
doi = "10.1109/LPT.2004.824627",
language = "English",
volume = "16",
pages = "972--974",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}