摘要
High-speed direct modulation of semiconductor lasers has important applications in optical communications. However, the maximum bandwidth for a free-running laser is limited by the K factor. It is demonstrated that the modulation bandwidth can be increased significantly through the injection locking technique, which even exceeds the limitation set by the K factor. This paper experimentally demonstrates that, by using the injection locking method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is achieved in 1.3-μm DFB lasers.
原文 | English |
---|---|
頁面 | 710-711 |
頁數 | 2 |
出版狀態 | Published - 2003 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 電氣與電子工程