3D RGB light emitting diodes prepared by through silicon via technology

Chun Liang Lu, Shoou-Jinn Chang, Wei Shou Chen, Ting Jen Hsueh

研究成果: Article

摘要

A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 C) operates is lower than that for a LED (120 C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.

原文English
頁(從 - 到)R156-R159
期刊ECS Journal of Solid State Science and Technology
7
發行號9
DOIs
出版狀態Published - 2018 一月 1

指紋

Light emitting diodes
Silicon
Cathodes
Three dimensional integrated circuits
Electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

Lu, Chun Liang ; Chang, Shoou-Jinn ; Chen, Wei Shou ; Hsueh, Ting Jen. / 3D RGB light emitting diodes prepared by through silicon via technology. 於: ECS Journal of Solid State Science and Technology. 2018 ; 卷 7, 編號 9. 頁 R156-R159.
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3D RGB light emitting diodes prepared by through silicon via technology. / Lu, Chun Liang; Chang, Shoou-Jinn; Chen, Wei Shou; Hsueh, Ting Jen.

於: ECS Journal of Solid State Science and Technology, 卷 7, 編號 9, 01.01.2018, p. R156-R159.

研究成果: Article

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