摘要
A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 ◦ C) operates is lower than that for a LED (120 ◦ C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.
| 原文 | English |
|---|---|
| 頁（從 - 到） | R156-R159 |
| 期刊 | ECS Journal of Solid State Science and Technology |
| 卷 | 7 |
| 發行號 | 9 |
| DOIs | |
| 出版狀態 | Published - 2018 一月 1 |
指紋
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
引用此文
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3D RGB light emitting diodes prepared by through silicon via technology. / Lu, Chun Liang; Chang, Shoou-Jinn; Chen, Wei Shou; Hsueh, Ting Jen.
於: ECS Journal of Solid State Science and Technology, 卷 7, 編號 9, 01.01.2018, p. R156-R159.研究成果: Article
TY - JOUR
T1 - 3D RGB light emitting diodes prepared by through silicon via technology
AU - Lu, Chun Liang
AU - Chang, Shoou-Jinn
AU - Chen, Wei Shou
AU - Hsueh, Ting Jen
PY - 2018/1/1
Y1 - 2018/1/1
N2 - A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 ◦ C) operates is lower than that for a LED (120 ◦ C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.
AB - A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 ◦ C) operates is lower than that for a LED (120 ◦ C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.
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U2 - 10.1149/2.0281809jss
DO - 10.1149/2.0281809jss
M3 - Article
AN - SCOPUS:85059946604
VL - 7
SP - R156-R159
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 9
ER -