400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai

研究成果: Article同行評審

229 引文 斯高帕斯(Scopus)


The 400-nm In0.05Ga0.95N-GaN MQW light-emitting diode (LED) structure and In0.05Ga0.95N-Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

頁(從 - 到)744-748
期刊IEEE Journal on Selected Topics in Quantum Electronics
出版狀態Published - 2002 7月

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 電氣與電子工程


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