400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

S. J. Chang; C. H. Kuo; Y. K. Su; L. W. Wu; J. K. Sheu; T. C. Wen; W. C. Lai; J. F. Chen; J. M. Tsai

doi:10.1109/JSTQE.2002.801677

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

S. J. Chang
, C. H. Kuo
, Y. K. Su
, L. W. Wu
, J. K. Sheu
, T. C. Wen
, W. C. Lai
, J. F. Chen
, J. M. Tsai

研究成果: Article › 同行評審

233 引文斯高帕斯（Scopus）

摘要

The 400-nm In_0.05Ga_0.95N-GaN MQW light-emitting diode (LED) structure and In_0.05Ga_0.95N-Al_0.1Ga_0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al_0.1Ga_0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

原文	English
頁（從 - 到）	744-748
頁數	5
期刊	IEEE Journal on Selected Topics in Quantum Electronics
卷	8
發行號	4
DOIs	https://doi.org/10.1109/JSTQE.2002.801677
出版狀態	Published - 2002 7月

All Science Journal Classification (ASJC) codes

原子與分子物理與光學
電氣與電子工程

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10.1109/JSTQE.2002.801677

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title = "400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes",

abstract = "The 400-nm In0.05Ga0.95N-GaN MQW light-emitting diode (LED) structure and In0.05Ga0.95N-Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.",

author = "Chang, \{S. J.\} and Kuo, \{C. H.\} and Su, \{Y. K.\} and Wu, \{L. W.\} and Sheu, \{J. K.\} and Wen, \{T. C.\} and Lai, \{W. C.\} and Chen, \{J. F.\} and Tsai, \{J. M.\}",

note = "Funding Information: Manuscript received March 29, 2002; revised May 9, 2002. This work was supported by the National Science Council under Grant NSC 90-2215-E-008-043 and Grant NSC 90-2112-M-008-046. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, T. C. Wen, W. C. Lai, and J. F. Chen are with the Institute of Microelectronics \& Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C. J. K. Sheu is with the Optical Science Center, National Central University, Chung-Li 320, Taiwan, R.O.C. J. M. Tsai is with the South Epitaxy Corporation, Hsin-shi 744, Tainan, Taiwan, R.O.C. Digital Object Identifier 10.1109/JSTQE.2002.801677.",

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T1 - 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

AU - Chang, S. J.

AU - Kuo, C. H.

AU - Su, Y. K.

AU - Wu, L. W.

AU - Sheu, J. K.

AU - Wen, T. C.

AU - Lai, W. C.

AU - Chen, J. F.

AU - Tsai, J. M.

N1 - Funding Information: Manuscript received March 29, 2002; revised May 9, 2002. This work was supported by the National Science Council under Grant NSC 90-2215-E-008-043 and Grant NSC 90-2112-M-008-046. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, T. C. Wen, W. C. Lai, and J. F. Chen are with the Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C. J. K. Sheu is with the Optical Science Center, National Central University, Chung-Li 320, Taiwan, R.O.C. J. M. Tsai is with the South Epitaxy Corporation, Hsin-shi 744, Tainan, Taiwan, R.O.C. Digital Object Identifier 10.1109/JSTQE.2002.801677.

PY - 2002/7

Y1 - 2002/7

N2 - The 400-nm In0.05Ga0.95N-GaN MQW light-emitting diode (LED) structure and In0.05Ga0.95N-Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

AB - The 400-nm In0.05Ga0.95N-GaN MQW light-emitting diode (LED) structure and In0.05Ga0.95N-Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

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DO - 10.1109/JSTQE.2002.801677

M3 - Article

AN - SCOPUS:0036661965

SN - 1077-260X

VL - 8

SP - 744

EP - 748

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 4

ER -

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

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