460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing

Chia Ta Chang, Shih Kuang Hsiao, Edward Yi Chang, Yu Lin Hsiao, Jui Chien Huang, Chung Yu Lu, Huang Choung Chang, Kai Wen Cheng, Ching Ting Lee

研究成果: Article

20 引文 斯高帕斯(Scopus)

摘要

This letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape- patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown on a conventional sapphire substrate (CSS) and HPSS are 480 and 262 arcsec, respectively. Such improvement is due to the reduction of the pure edge threading dislocations. At the forward current of 20 mA, the light output power of the LEDs grown on CSS and HPSS were 4.05 and 5.86 mW, respectively. This improvement of 44% light-output power can be attributed to the improved quality of the material and the increase of the light extraction by the fully inclined facets of the HPSS.

原文English
頁(從 - 到)1366-1368
頁數3
期刊IEEE Photonics Technology Letters
21
發行號19
DOIs
出版狀態Published - 2009 十月 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Chang, C. T., Hsiao, S. K., Chang, E. Y., Hsiao, Y. L., Huang, J. C., Lu, C. Y., Chang, H. C., Cheng, K. W., & Lee, C. T. (2009). 460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing. IEEE Photonics Technology Letters, 21(19), 1366-1368. https://doi.org/10.1109/LPT.2009.2026728