4H-SiC nano-pillar avalanche photodiode with illumination-dependent characteristics

Rongdun Hong, Yi Zhou, Kang Long Wang, Zhengyun Wu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A 4H-SiC nano-pillar-based avalanche photodiode (NAPD) with a separate absorption region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the device geometry and the doping concentration of each layer, the avalanche breakdown voltage (V br) of the NAPD is found to be dependent of the incident wavelength and power density, which are explained by the band diagrams of 4H-SiC NAPDs.

原文English
文章編號5744096
頁(從 - 到)816-818
頁數3
期刊IEEE Photonics Technology Letters
23
發行號12
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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