TY - JOUR
T1 - 4H-SiC nano-pillar avalanche photodiode with illumination-dependent characteristics
AU - Hong, Rongdun
AU - Zhou, Yi
AU - Wang, Kang Long
AU - Wu, Zhengyun
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - A 4H-SiC nano-pillar-based avalanche photodiode (NAPD) with a separate absorption region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the device geometry and the doping concentration of each layer, the avalanche breakdown voltage (V br) of the NAPD is found to be dependent of the incident wavelength and power density, which are explained by the band diagrams of 4H-SiC NAPDs.
AB - A 4H-SiC nano-pillar-based avalanche photodiode (NAPD) with a separate absorption region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the device geometry and the doping concentration of each layer, the avalanche breakdown voltage (V br) of the NAPD is found to be dependent of the incident wavelength and power density, which are explained by the band diagrams of 4H-SiC NAPDs.
UR - http://www.scopus.com/inward/record.url?scp=79957709037&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79957709037&partnerID=8YFLogxK
U2 - 10.1109/LPT.2011.2140391
DO - 10.1109/LPT.2011.2140391
M3 - Article
AN - SCOPUS:79957709037
SN - 1041-1135
VL - 23
SP - 816
EP - 818
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 12
M1 - 5744096
ER -