5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

Yeong Lin Lai, Edward Y. Chang, Chun Yen Chang, T. K. Chen, T. H. Liu, S. P. Wang, T. H. Chen, C. T. Lee

研究成果: Article同行評審

40 引文 斯高帕斯(Scopus)

摘要

A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.

原文English
頁(從 - 到)229-231
頁數3
期刊IEEE Electron Device Letters
17
發行號5
DOIs
出版狀態Published - 1996 五月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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