5 nm amorphous boron and carbon added Ru film as a highly reliable Cu diffusion barrier

Dung-Ching Perng, Jia Bin Yeh, Kuo Chung Hsu, Yi Chun Wang

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

The failure mode and Cu barrier properties of a 5 nm thick boron and carbon added Ru (Ru-B-C) film deposited on Si substrate have been investigated. Results from X-ray diffraction (XRD) and Fourier-transformed electron diffraction patterns indicate that the Ru-B-C film is amorphous up to 700°C. Unlike pure Ru film, the Ru in the Ru-B-C film recrystallized at 750°C instead of reacting with Si at the interface to form Ru2Si 3. The sheet resistance and XRD results show that the 5 nm Ru-B-C barrier is thermally stable up to 750°C, whereas the 5 and 10 nm Ru are only stable below 550 and 600°C, respectively.

原文English
期刊Electrochemical and Solid-State Letters
13
發行號8
DOIs
出版狀態Published - 2010 六月 21

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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