5 nm amorphous boron and carbon added Ru film as a highly reliable Cu diffusion barrier

Dung-Ching Perng; Jia Bin Yeh; Kuo Chung Hsu; Yi Chun Wang

doi:10.1149/1.3442753

5 nm amorphous boron and carbon added Ru film as a highly reliable Cu diffusion barrier

Dung-Ching Perng, Jia Bin Yeh, Kuo Chung Hsu, Yi Chun Wang

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The failure mode and Cu barrier properties of a 5 nm thick boron and carbon added Ru (Ru-B-C) film deposited on Si substrate have been investigated. Results from X-ray diffraction (XRD) and Fourier-transformed electron diffraction patterns indicate that the Ru-B-C film is amorphous up to 700°C. Unlike pure Ru film, the Ru in the Ru-B-C film recrystallized at 750°C instead of reacting with Si at the interface to form Ru₂Si ₃. The sheet resistance and XRD results show that the 5 nm Ru-B-C barrier is thermally stable up to 750°C, whereas the 5 and 10 nm Ru are only stable below 550 and 600°C, respectively.

原文	English
期刊	Electrochemical and Solid-State Letters
卷	13
發行號	8
DOIs	https://doi.org/10.1149/1.3442753
出版狀態	Published - 2010 6月 21

All Science Journal Classification (ASJC) codes

化學工程 (全部)
材料科學(全部)
物理與理論化學
電化學
電氣與電子工程

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abstract = "The failure mode and Cu barrier properties of a 5 nm thick boron and carbon added Ru (Ru-B-C) film deposited on Si substrate have been investigated. Results from X-ray diffraction (XRD) and Fourier-transformed electron diffraction patterns indicate that the Ru-B-C film is amorphous up to 700°C. Unlike pure Ru film, the Ru in the Ru-B-C film recrystallized at 750°C instead of reacting with Si at the interface to form Ru2Si 3. The sheet resistance and XRD results show that the 5 nm Ru-B-C barrier is thermally stable up to 750°C, whereas the 5 and 10 nm Ru are only stable below 550 and 600°C, respectively.",

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AU - Perng, Dung-Ching

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AU - Hsu, Kuo Chung

AU - Wang, Yi Chun

PY - 2010/6/21

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N2 - The failure mode and Cu barrier properties of a 5 nm thick boron and carbon added Ru (Ru-B-C) film deposited on Si substrate have been investigated. Results from X-ray diffraction (XRD) and Fourier-transformed electron diffraction patterns indicate that the Ru-B-C film is amorphous up to 700°C. Unlike pure Ru film, the Ru in the Ru-B-C film recrystallized at 750°C instead of reacting with Si at the interface to form Ru2Si 3. The sheet resistance and XRD results show that the 5 nm Ru-B-C barrier is thermally stable up to 750°C, whereas the 5 and 10 nm Ru are only stable below 550 and 600°C, respectively.

AB - The failure mode and Cu barrier properties of a 5 nm thick boron and carbon added Ru (Ru-B-C) film deposited on Si substrate have been investigated. Results from X-ray diffraction (XRD) and Fourier-transformed electron diffraction patterns indicate that the Ru-B-C film is amorphous up to 700°C. Unlike pure Ru film, the Ru in the Ru-B-C film recrystallized at 750°C instead of reacting with Si at the interface to form Ru2Si 3. The sheet resistance and XRD results show that the 5 nm Ru-B-C barrier is thermally stable up to 750°C, whereas the 5 and 10 nm Ru are only stable below 550 and 600°C, respectively.

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5 nm amorphous boron and carbon added Ru film as a highly reliable Cu diffusion barrier

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