The failure mode and Cu barrier properties of a 5 nm thick boron and carbon added Ru (Ru-B-C) film deposited on Si substrate have been investigated. Results from X-ray diffraction (XRD) and Fourier-transformed electron diffraction patterns indicate that the Ru-B-C film is amorphous up to 700°C. Unlike pure Ru film, the Ru in the Ru-B-C film recrystallized at 750°C instead of reacting with Si at the interface to form Ru2Si 3. The sheet resistance and XRD results show that the 5 nm Ru-B-C barrier is thermally stable up to 750°C, whereas the 5 and 10 nm Ru are only stable below 550 and 600°C, respectively.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering