642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

S. J. Chang, C. S. Chang

研究成果: Article

7 引文 斯高帕斯(Scopus)

摘要

For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LD's). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LD's with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm× 800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature To of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).

原文English
頁(從 - 到)651-653
頁數3
期刊IEEE Photonics Technology Letters
10
發行號5
DOIs
出版狀態Published - 1998 五月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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