642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

S. J. Chang; C. S. Chang

doi:10.1109/68.669229

642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

S. J. Chang, C. S. Chang

微電子工程研究所

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LD's). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LD's with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm× 800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature T_o of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).

原文	English
頁（從 - 到）	651-653
頁數	3
期刊	IEEE Photonics Technology Letters
卷	10
發行號	5
DOIs	https://doi.org/10.1109/68.669229
出版狀態	Published - 1998 5月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

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title = "642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer",

abstract = "For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LD's). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LD's with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm× 800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature To of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).",

author = "Chang, {S. J.} and Chang, {C. S.}",

note = "Funding Information: Manuscript received July 14, 1997; revised December 22, 1997. This work was supported by the National Science Council under Contract NSC-86 2622-E-006-005R. The authors are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)03016-X.",

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T1 - 642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

AU - Chang, S. J.

AU - Chang, C. S.

N1 - Funding Information: Manuscript received July 14, 1997; revised December 22, 1997. This work was supported by the National Science Council under Contract NSC-86 2622-E-006-005R. The authors are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)03016-X.

PY - 1998/5

Y1 - 1998/5

N2 - For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LD's). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LD's with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm× 800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature To of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).

AB - For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LD's). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LD's with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm× 800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature To of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

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