650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes

Shoou Jinn Chang, Chih Sung Chang

研究成果: Article

10 引文 斯高帕斯(Scopus)

摘要

We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.

原文English
頁(從 - 到)L653-L655
期刊Japanese Journal of Applied Physics, Part 2: Letters
37
發行號6 A
出版狀態Published - 1998 六月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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