We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.
|頁（從 - 到）||L653-L655|
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||Published - 1998|
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)