75-110-GHz W-band High-Linearity Traveling-Wave T/R Switch by Using Negative Gate/Body-Biasing in 90-nm CMOS

Wen Chian Lai, Chien Chang Chou, Shih Chiao Huang, Tzuen Hsi Huang, Huey Ru Chuang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this letter, a 75-110-GHz W-band high-linearity traveling-wave single-pole-double-throw switch in 90-nm CMOS GUTM 1P9M is presented. Compared with the traditional traveling-wave switch with negative body-biasing technique, the proposed design applies the negative biasing to the gate terminals simultaneously. Therefore, the third-order intermodulation product is significantly reduced. The measured results show that the insertion loss is less than 3.4 dB, return loss is better than 10 dB, and Tx-to-Rx isolation is higher than 40 dB, respectively. For the linearity of the switch, the measured IP1dB is higher than 15 dBm and IIP3 is 37.1 dBm at 94 GHz, respectively. The proposed switch presents good performance of insertion loss, isolation, IP1dB, and IIP3, among the compared millimeter-wave CMOS switches.

原文English
文章編號7907186
頁(從 - 到)488-490
頁數3
期刊IEEE Microwave and Wireless Components Letters
27
發行號5
DOIs
出版狀態Published - 2017 五月

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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