尋找研究成果

在所有內容中搜尋

為 研究成果 進行篩選

搜尋概念
已選取的篩選器

出版年份

  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011

作者

  • Wei-Chi Lai

Abnormal Hump Effect Induced by Hydrogen Diffusion during Self-Heating Stress in Top-Gate Amorphous InGaZnO TFTs

Chen, H. C., Chen, J. J., Tu, Y. F., Zhou, K. J., Kuo, C. W., Su, W. C., Hung, Y. H., Shih, Y. S., Huang, H. C., Tsai, T. M., Huang, J. W., Lai, W. C. & Chang, T. C., 2020 七月, 於 : IEEE Transactions on Electron Devices. 67, 7, p. 2807-2811 5 p., 9102381.

研究成果: Article

Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

Chen, H. C., Zhou, K. J., Chen, P. H., Chen, G. F., Huang, S. P., Chen, J. J., Kuo, C. W., Tsao, Y. C., Tai, M. C., Chu, A. K., Lai, W. C. & Chang, T. C., 2019 八月, 於 : IEEE Electron Device Letters. 40, 8, p. 1281-1284 4 p., 8736827.

研究成果: Article

An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

Chen, G. F., Chen, H. C., Chang, T. C., Huang, S. P., Chen, H. M., Liao, P. Y., Chen, J. J., Kuo, C. W., Lai, W. C., Chu, A. K., Lin, S. C., Yeh, C. Y., Chang, C. S., Tsai, C. M., Yu, M. C. & Zhang, S., 2019 六月, 於 : IEEE Transactions on Electron Devices. 66, 6, p. 2614-2619 6 p., 8689093.

研究成果: Article

2 引文 斯高帕斯(Scopus)

Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers

Yang, C. C., Sheu, J-K., Huang, M. S., Tu, S. J., Huang, F. W., Chang, K. H., Lee, M. L. & Lai, W-C., 2011 五月 13, Gallium Nitride Materials and Devices VI. 79391J. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7939).

研究成果: Conference contribution

Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration

Yang, C. C., Jang, C. H., Sheu, J-K., Lee, M. L., Tu, S. J., Huang, F. W., Yeh, Y. H. & Lai, W-C., 2011 七月 4, 於 : Optics Express. 19, 104, p. A695-A700

研究成果: Article

16 引文 斯高帕斯(Scopus)

Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity

Chang, C. W., Wadekar, P. V., Guo, S. S., Cheng, Y. J., Chou, M., Huang, H. C., Hsieh, W. C., Lai, W. C., Chen, Q. Y. & Tu, L. W., 2018 一月 1, 於 : Journal of Electronic Materials. 47, 1, p. 359-367 9 p.

研究成果: Article

1 引文 斯高帕斯(Scopus)

Conversion efficiency improvement of InGaN/GaN multiple-quantum-well solar cells with Ex Situ AlN nucleation layer

Yu, C. T., Lai, W. C., Yen, C. H., Chang, C. W., Tu, L. W. & Chang, S. J., 2015 五月 1, 於 : IEEE Transactions on Electron Devices. 62, 5, p. 1473-1477 5 p., 7078911.

研究成果: Article

3 引文 斯高帕斯(Scopus)
26 引文 斯高帕斯(Scopus)

Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Chen, H. C., Chang, T. C., Lai, W. C., Chen, G. F., Chen, B. W., Hung, Y. J., Chang, K. J., Cheng, K. C., Huang, C. S., Chen, K. K., Lu, H. H. & Lin, Y. H., 2018 八月 8, 於 : ACS Applied Materials and Interfaces. 10, 31, p. 25866-25870 5 p.

研究成果: Article

4 引文 斯高帕斯(Scopus)

Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes

Shih, Y. H., Chang, J. Y., Sheu, J-K., Kuo, Y. K., Chen, F. M., Lee, M. L. & Lai, W-C., 2016 三月 1, 於 : IEEE Transactions on Electron Devices. 63, 3, p. 1141-1147 7 p., 7399737.

研究成果: Article

11 引文 斯高帕斯(Scopus)

Double superstructures in InGaN/GaN nano-pyramid arrays

Chang, C. Y., Li, H., Hong, K. B., Yang, Y. Y., Lai, W. C. & Lu, T. C., 2015 八月 11, 於 : Superlattices and Microstructures. 86, p. 275-279 5 p.

研究成果: Article

1 引文 斯高帕斯(Scopus)

Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on si-implanted GaN templates

Lee, M. L., Yeh, Y. H., Tu, S. J., Chen, P. C., Wu, M. J., Lai, W. C. & Sheu, J. K., 2013 九月 9, 於 : Optics Express. 21, 105, p. A864-A871

研究成果: Article

6 引文 斯高帕斯(Scopus)
1 引文 斯高帕斯(Scopus)
12 引文 斯高帕斯(Scopus)
6 引文 斯高帕斯(Scopus)

Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells

Tsai, C. M., Chang, C. S., Xu, Z., Huang, W. P., Lai, W. C. & Bow, J. S., 2019 四月 15, 於 : OSA Continuum. 2, 4, p. 1207-1214 8 p.

研究成果: Article

Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

Tsai, Y. L., Lin, C. C., Han, H. V., Chen, H. C., Chen, K. J., Lai, W-C., Sheu, J-K., Lai, F. I., Yu, P. & Kuo, H. C., 2013 六月 10, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. 86201M. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 8620).

研究成果: Conference contribution

Efficiency improvement of short-period InGaN/GaN multiple-quantum well solar cells with H2 in the GaN cap layer

Lai, W-C., Yang, Y. Y. & Horng, R. H., 2013 十二月 2, 於 : IEEE/OSA Journal of Display Technology. 9, 12, p. 953-956 4 p., 6542659.

研究成果: Article

Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template

Lan, W. Y., Yin, Y. F., Tsai, C. H., Ma, M. X., Li, H. W., Lai, W. C. & Huang, J., 2015, Fourteenth International Conference on Solid State Lighting and LED-Based Illumination Systems. Dietz, N., Huang, J-J., Kane, M. H. & Jiao, J. (編輯). SPIE, 95710O. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9571).

研究成果: Conference contribution

8 引文 斯高帕斯(Scopus)

Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices

Chen, J. T., Lai, W-C., Chen, C. H., Yang, Y. Y., Sheu, J-K. & Lai, L. W., 2011 六月 6, 於 : Optics Express. 19, 12, p. 11873-11879 7 p.

研究成果: Article

7 引文 斯高帕斯(Scopus)

Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts

Liu, S. Y., Ye, J. C., Lin, Y. C., Chang, K. H., Lee, M. L., Lai, W. C. & Sheu, J. K., 2011 五月 13, Gallium Nitride Materials and Devices VI. 793925. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7939).

研究成果: Conference contribution

Enhanced internal quantum efficiency in graphene/InGaN multiple-quantum- well hybrid structures

Huang, H. M., Chang, C. Y., Hsu, Y. S., Lu, T. C., Lan, Y. P. & Lai, W. C., 2012 八月 6, 於 : Applied Physics Letters. 101, 6, 061905.

研究成果: Article

6 引文 斯高帕斯(Scopus)

Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers

Sheu, J. K., Tu, S. J., Lee, M. L., Yeh, Y. H., Yang, C. C., Huang, F. W., Lai, W. C., Chen, C. W. & Chi, G. C., 2011 十月 1, 於 : IEEE Electron Device Letters. 32, 10, p. 1400-1402 3 p., 5967887.

研究成果: Article

8 引文 斯高帕斯(Scopus)

Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells

Tu, S. J., Sheu, J-K., Lee, M. L., Yang, C. C., Chang, K. H., Yeh, Y. H., Huang, F. W. & Lai, W-C., 2011 六月 20, 於 : Optics Express. 19, 13, p. 12719-12726 8 p.

研究成果: Article

7 引文 斯高帕斯(Scopus)

Formation of Hump Effect Due to Top-Gate Bias Stress in Organic Thin-Film Transistors

Chen, H. C., Tsao, Y. C., Chu, A. K., Huang, H. C., Lai, W. C., Chen, G. F., Huang, S. P., Chang, T. C., Chen, P. H., Chen, J. J., Kuo, C. W., Zhou, K. J. & Hung, Y. H., 2019 十二月, 於 : IEEE Electron Device Letters. 40, 12, p. 1941-1944 4 p., 8880614.

研究成果: Article

1 引文 斯高帕斯(Scopus)
11 引文 斯高帕斯(Scopus)
7 引文 斯高帕斯(Scopus)

GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching

Lin, N. M., Shei, S. C., Chang, S. J., Lai, W. C., Yang, Y. Y., Lin, W. C. & Lo, H. M., 2012 一月 1, Equipment Manufacturing Technology. p. 542-546 5 p. (Advanced Materials Research; 卷 422).

研究成果: Conference contribution

GaN-based LEDs grown on HVPE growth high crystalline quality thick GaN template

Lin, D. W., Lin, C. C., Chiu, C. H., Lee, C. Y., Yang, Y. Y., Li, Z. Y., Lai, W. C., Lu, T. C., Kuo, H. C. & Wang, S. C., 2011 十月 18, 於 : Journal of the Electrochemical Society. 158, 11, p. H1103-H1106

研究成果: Article

8 引文 斯高帕斯(Scopus)

GaN-based LEDs with air voids prepared by laser scribing and chemical etching

Shei, S. C., Lo, H. M., Lai, W. C., Lin, W. C. & Chang, S. J., 2011 八月 5, 於 : IEEE Photonics Technology Letters. 23, 16, p. 1172-1174 3 p., 5782933.

研究成果: Article

4 引文 斯高帕斯(Scopus)

GaN-based LEDs with air voids prepared by one-step MOCVD growth

Lin, N. M., Chang, S. J., Shei, S. C., Lai, W. C., Yang, Y. Y., Lin, W. C. & Lo, H. M., 2011 九月 15, 於 : Journal of Lightwave Technology. 29, 18, p. 2831-2835 5 p., 5960753.

研究成果: Article

7 引文 斯高帕斯(Scopus)

GaN-based light-emitting diodes on electrochemically etched n --GaN template

Lai, W. C., Yen, C. H., Li, J. Z., Yang, Y. Y., Cheng, H. E., Chang, S. J. & Li, S., 2013 八月 5, 於 : IEEE Photonics Technology Letters. 25, 15, p. 1531-1534 4 p., 6548046.

研究成果: Article

4 引文 斯高帕斯(Scopus)

GaN-based light-emitting diodes with air gap array and patterned sapphire substrate

Lai, W-C., Yang, Y. Y., Chen, Y. H. & Sheu, J-K., 2011 八月 19, 於 : IEEE Photonics Technology Letters. 23, 17, p. 1207-1209 3 p., 5783297.

研究成果: Article

2 引文 斯高帕斯(Scopus)

GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

Lai, W. C., Lin, C. N., Lai, Y. C., Yu, P., Chi, G. C. & Chang, S. J., 2014 三月 10, 於 : Optics Express. 22, 5, p. A396-A401

研究成果: Article

16 引文 斯高帕斯(Scopus)
12 引文 斯高帕斯(Scopus)

GaN-based light-emitting diodes with step graded-refractive index (ZnO x(SiO2)1-x micropillar array

Chang, H. M., Yang, Y. Y., Lai, W. C., Li, S., Lin, Y. R., Jiao, Z. Y. & Chang, S. J., 2013 一月 1, 於 : IEEE/OSA Journal of Display Technology. 9, 5, p. 353-358 6 p., 6308728.

研究成果: Article

GaN-Based light-emitting-diode with a p-InGaN layer

Chen, P. H., Kuo, C. H., Lai, W. C., Chen, Y. A., Chang, L. C. & Chang, S. J., 2014 三月, 於 : IEEE/OSA Journal of Display Technology. 10, 3, p. 204-207 4 p., 6679256.

研究成果: Article

1 引文 斯高帕斯(Scopus)

GaN-based light-emitting diode with sputtered AlN nucleation layer

Yen, C. H., Lai, W-C., Yang, Y. Y., Wang, C. K., Ko, T. K., Hon, S. J. & Chang, S-J., 2012 二月 6, 於 : IEEE Photonics Technology Letters. 24, 4, p. 294-296 3 p., 6092445.

研究成果: Article

42 引文 斯高帕斯(Scopus)

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

Chang, H. M., Lai, W. C., Chen, W. S. & Chang, S. J., 2015 四月 6, 於 : Optics Express. 23, 7, p. A337-A345

研究成果: Article

11 引文 斯高帕斯(Scopus)

GaN-Based ultraviolet light emitting diodes with Ex situ sputtered AlN nucleation layer

Lai, W. C., Yen, C. H., Yang, Y. Y., Wang, C. K. & Chang, S. J., 2013 六月 6, 於 : IEEE/OSA Journal of Display Technology. 9, 11, p. 895-899 5 p., 6522544.

研究成果: Article

15 引文 斯高帕斯(Scopus)

GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer

Huang, Z. D., Weng, W. Y., Chang, S-J., Chiu, C. J., Hsueh, T. J., Lai, W-C. & Wu, S. L., 2011 六月 1, 於 : Journal of the Electrochemical Society. 158, 7

研究成果: Article

5 引文 斯高帕斯(Scopus)

GaN MSM UV Photodetector with Sputtered AlN Nucleation Layer

Wang, C. K., Chiou, Y. Z., Chang, S. J., Lai, W. C., Chang, S. P., Yen, C. H. & Hung, C. C., 2015 九月, 於 : IEEE Sensors Journal. 15, 9, p. 4743-4748 6 p., 7093119.

研究成果: Article

16 引文 斯高帕斯(Scopus)

GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer

Huang, Z. D., Weng, W. Y., Chang, S. J., Hung, S. C., Chiu, C. J., Hsueh, T. J., Lai, W. C. & Wu, S. L., 2011 十一月 2, 於 : IEEE Sensors Journal. 11, 11, p. 2895-2901 7 p., 5751200.

研究成果: Article

3 引文 斯高帕斯(Scopus)

High-Performance Perovskite-Based Light-Emitting Diodes from the Conversion of Amorphous Spin-Coated Lead Bromide with Phenethylamine Doping

Lai, W. C., Hsieh, W. M., Yang, S. H., Yang, J. C., Guo, T. F., Chen, P., Lin, L. J. & Hsu, H. C., 2020 四月 21, 於 : ACS Omega. 5, 15, p. 8697-8706 10 p.

研究成果: Article

開啟存取

Hydrogen gas generation using n-GaN photoelectrodes with immersed indium tin oxide ohmic contacts

Liu, S. Y., Lin, Y. C., Ye, J. C., Tu, S. J., Huang, F. W., Lee, M. L., Lai, W. C. & Sheu, J. K., 2011 十一月 7, 於 : Optics Express. 19, 106, p. A1196-A1201

研究成果: Article

16 引文 斯高帕斯(Scopus)

III-V Nitride-based photodetection

Lin, C. C., Hsu, L. H., Tsai, Y. L., Kuo, H. C. H., Lai, W. C. & Sheu, J. K., 2017 一月 1, Handbook of GaN Semiconductor Materials and Devices. CRC Press, p. 597-614 18 p.

研究成果: Chapter

Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation

Liu, S. Y., Sheu, J. K., Lee, M. L., Lin, Y. C., Tu, S. J., Huang, F. W. & Lai, W. C., 2012 三月 12, 於 : Optics Express. 20, 102, p. A190-A196

研究成果: Article

8 引文 斯高帕斯(Scopus)

Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors

Huang, S. P., Chen, P. H., Chen, H. C., Zheng, Y. Z., Chu, A. K., Tsao, Y. C., Shih, Y. S., Wang, Y. X., Wu, C. C., Lai, W. C. & Chang, T. C., 2019 十月, 於 : IEEE Electron Device Letters. 40, 10, p. 1638-1641 4 p., 8796401.

研究成果: Article