尋找研究成果

搜尋結果

• AlGaN/GaN MOS-HEMTs with ZnO gate insulator and chlorine surface treatment

  Chiou, Y. L. & Lee, C. T., 2010, TENCON 2010 - 2010 IEEE Region 10 Conference. p. 1222-1224 3 p. 5686365

  研究成果: Conference contribution

• AlGaN/GaN MOS-HEMTs with TiO₂ gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition

  Liu, H. Y., Lee, C. S., Hsu, W. C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C. & Chang, H. C., 2015 8月 14, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., p. 578-580 3 p. 7203398. (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August).

  研究成果: Conference contribution
  3 引文 斯高帕斯（Scopus）

• AlGaN/GaN MOSHEMTs with liquid-phase-deposited TiO ₂ as gate dielectric

  Wu, T. Y., Lin, S. K., Sze, P. W., Huang, J. J., Chien, W. C., Hu, C. C., Tsai, M. J. & Wang, Y. H., 2009 12月, 於: IEEE Transactions on Electron Devices. 56, 12, p. 2911-2916 6 p., 5291787.

  研究成果: Article › 同行評審
  27 引文 斯高帕斯（Scopus）

• AlGaN/GaN MOS-HEMTs with gate ZnO dielectric layer

  Lee, C. T., Chiou, Y. L. & Lee, C. S., 2010 11月, 於: IEEE Electron Device Letters. 31, 11, p. 1220-1223 4 p., 5585700.

  研究成果: Article › 同行評審
  43 引文 斯高帕斯（Scopus）

• AlGaN/GaN modulation-doped field-effect transistors with An Mg-doped carrier confinement layer

  Chang, S. J., Wei, S. C., Su, Y. K., Liu, C. H., Chen, S. C., Liaw, U. H., Tsai, T. Y. & Hsu, T. H., 2003 6月, 於: Japanese Journal of Applied Physics. 42, 6 A, p. 3316-3319 4 p.

  研究成果: Article › 同行評審
  20 引文 斯高帕斯（Scopus）

• AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor with liquid-phase-deposited barium-doped TiO ₂ as a gate dielectric

  Hu, C. C., Lin, M. S., Wu, T. Y., Adriyanto, F., Sze, P. W., Wu, C. L. & Wang, Y. H., 2012 1月, 於: IEEE Transactions on Electron Devices. 59, 1, p. 121-127 7 p., 6069856.

  研究成果: Article › 同行評審
  19 引文 斯高帕斯（Scopus）

• AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor with liquid phase deposited Al₂ O₃ as gate dielectric

  Basu, S., Singh, P. K., Sze, P. W. & Wang, Y-H., 2010 9月 7, 於: Journal of the Electrochemical Society. 157, 10

  研究成果: Article › 同行評審
  16 引文 斯高帕斯（Scopus）

• AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate

  Wu, T. Y., Hu, C. C., Sze, P. W., Huang, T. J., Adriyanto, F., Wu, C. L. & Wang, Y. H., 2013, 於: Solid-State Electronics. 82, p. 1-5 5 p.

  研究成果: Article › 同行評審
  5 引文 斯高帕斯（Scopus）

• AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH₄)₂S_x surface treatment

  Chiou, Y. L., Lee, C. S. & Lee, C. T., 2010 7月 19, 於: Applied Physics Letters. 97, 3, 032107.

  研究成果: Article › 同行評審
  26 引文 斯高帕斯（Scopus）

• AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method

  Huang, L. H., Yeh, S. H., Lee, C. T., Tang, H., Bardwell, J. & Webb, J. B., 2008 4月, 於: IEEE Electron Device Letters. 29, 4, p. 284-286 3 p.

  研究成果: Article › 同行評審
  58 引文 斯高帕斯（Scopus）

• AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga₂O₃ Gate Dielectric Layer Grown by Vapor Cooling Condensation System

  Lee, H. Y., Chang, T. W. & Lee, C. T., 2021 6月, 於: Journal of Electronic Materials. 50, 6, p. 3748-3753 6 p.

  研究成果: Article › 同行評審
  4 引文 斯高帕斯（Scopus）

• AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer

  Huang, L. H., Ciou, Y. L., Yen, S. H. & Lee, C. T., 2007 12月 1, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. p. 275-278 4 p. 4450115. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

  研究成果: Conference contribution

• Algan/gan metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition Sio₂ gate oxide

  Wang, C. K., Chiou, Y. Z., Chang, S. J., Su, Y. K., Huang, B. R., Lin, T. K. & Chen, S. C., 2003 5月, 於: Journal of Electronic Materials. 32, 5, p. 407-410 4 p.

  研究成果: Article › 同行評審
  17 引文 斯高帕斯（Scopus）

• AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase deposited oxide

  Chou, D. W., Lee, K. W., Huang, J. J., Wu, H. R., Wang, Y. H., Houng, M. P., Chang, S. J. & Su, Y. K., 2002 7月 1, 於: Japanese Journal of Applied Physics, Part 2: Letters. 41, 7 A, p. L748-L750

  研究成果: Article › 同行評審
  28 引文 斯高帕斯（Scopus）

• AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

  Lee, K. H., Chang, P. C. & Chang, S. J., 2011 10月 10, 於: Applied Physics Letters. 99, 15, 153505.

  研究成果: Article › 同行評審
  3 引文 斯高帕斯（Scopus）

• AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer

  Chang, P. C., Lee, K. H., Wang, Z. H. & Chang, S. J., 2014, 於: Journal of Nanomaterials. 2014, 623043.

  研究成果: Article › 同行評審
  2 引文 斯高帕斯（Scopus）

• AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO ₂ dielectrics

  Lee, K. H., Chang, P. C. & Chang, S. J., 2013, 於: Microelectronic Engineering. 104, p. 105-109 5 p.

  研究成果: Article › 同行評審
  9 引文 斯高帕斯（Scopus）

• AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures

  Lee, K. H., Chang, P. C., Chang, S. J., Su, Y. K. & Yu, C. L., 2010 5月 24, 於: Applied Physics Letters. 96, 21, 212105.

  研究成果: Article › 同行評審
  15 引文 斯高帕斯（Scopus）

• AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications

  Chung, Y., Hang, C. Y., Cai, S., Qian, Y., Wen, C. P., Wang, K. L. & Itoh, T., 2003 2月, 於: IEEE Transactions on Microwave Theory and Techniques. 51, 2 II, p. 653-659 7 p.

  研究成果: Article › 同行評審
  49 引文 斯高帕斯（Scopus）

• AlGaN/GaN heterostructure grown on 1∘-tilt sapphire substrate by MOCVD

  Lam, K. T., Yu, C. L., Chang, P. C., Liaw, U. H., Chang, S. J. & Lin, J. C., 2008 3月, 於: Superlattices and Microstructures. 43, 3, p. 147-152 6 p.

  研究成果: Article › 同行評審
  4 引文 斯高帕斯（Scopus）

• AlGaN/GaN heterostructure field-effect transistor with semi-insulating Mg-doped GaN cap layer

  Lee, K. H., Chang, P. C. & Chang, S. J., 2012, 於: ECS Solid State Letters. 1, 1, p. Q14-Q16

  研究成果: Article › 同行評審
  2 引文 斯高帕斯（Scopus）

• AlGaN/GaN heterostructure field-effect transistors with multi-Mg _xN _y/GaN buffer and Photo-CVD SiO ₂ gate dielectric

  Lee, K. H., Chang, P. C., Chang, S. J. & Su, Y. K., 2012 6月, 於: Solid-State Electronics. 72, p. 38-43 6 p.

  研究成果: Article › 同行評審
  2 引文 斯高帕斯（Scopus）

• AlGaN/GaN Enhancement-Mode MOSHEMTs Utilizing Hybrid Gate-Recessed Structure and Ferroelectric Charge Trapping/Storage Stacked LiNbO₃/HfO₂/Al₂O₃Structure

  Lee, H. Y., Lin, C. H., Wei, C. C., Yang, J. C., Chang, E. Y. & Lee, C. T., 2021 8月, 於: IEEE Transactions on Electron Devices. 68, 8, p. 3768-3774 7 p., 9466375.

  研究成果: Article › 同行評審
  3 引文 斯高帕斯（Scopus）

• AlGaN/AlN/GaN MOS-HEMTs with Al₂O₃ gate dielectric formed by using ozone water oxidation technique

  Lee, C. S., Liu, H. Y., Hsu, W. C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C. & Chang, H. C., 2015 8月 14, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., p. 194-196 3 p. 7203397. (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August).

  研究成果: Conference contribution

• Algal extracellular organic matter mediated photocatalytic degradation of estrogens

  Wu, P. H., Yeh, H. Y., Chou, P. H., Hsiao, W. W. & Yu, C. P., 2021 2月, 於: Ecotoxicology and Environmental Safety. 209, 111818.

  研究成果: Article › 同行評審

  開啟存取
  5 引文 斯高帕斯（Scopus）

• Algal biomass dehydration

  Show, K. Y., Lee, D. J. & Chang, J. S., 2013 5月, 於: Bioresource technology. 135, p. 720-729 10 p.

  研究成果: Article › 同行評審
  88 引文 斯高帕斯（Scopus）

• AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

  Chang, S. J., Chang, C. S., Su, Y. K., Chang, P. T., Wu, Y. R., Huang, K. H. & Chen, T. P., 1997 9月, 於: IEEE Photonics Technology Letters. 9, 9, p. 1199-1201 3 p.

  研究成果: Article › 同行評審
  18 引文 斯高帕斯（Scopus）

• AlGaInp - Sapphire glue bonded light-emitting diodes

  Chang, S. J., Su, Y. K., Yang, T., Chang, C. S., Chen, T. P. & Huang, K. H., 2002 10月, 於: IEEE Journal of Quantum Electronics. 38, 10, p. 1390-1394 5 p.

  研究成果: Article › 同行評審
  13 引文 斯高帕斯（Scopus）

• AlGaInP multiquantum well light-emitting diodes

  Chang, S. J., Chang, C. S., Su, Y. K., Chang, P. T., Wu, Y. R., Huang, K. H. & Chen, T. P., 1997, 於: IEE Proceedings: Optoelectronics. 144, 6, p. 405-409 5 p.

  研究成果: Article › 同行評審
  7 引文 斯高帕斯（Scopus）

• AlGaInP LEDs prepared by contact-transferred and mask-embedded lithography

  Lo, H. M., Hsieh, Y. T., Shei, S. C., Lee, Y. C., Zeng, X. F., Weng, W. Y., Lin, N. M. & Chang, S. J., 2010, 於: IEEE Journal of Quantum Electronics. 46, 12, p. 1834-1839 6 p., 5638356.

  研究成果: Article › 同行評審
  10 引文 斯高帕斯（Scopus）

• AlGaInP-GaInP compressively strained multiquantum-well light-emitting diodes for polymer fiber application

  Chang, S. J. & Chang, C. S., 1998 6月, 於: IEEE Photonics Technology Letters. 10, 6, p. 772-774 3 p.

  研究成果: Article › 同行評審
  15 引文 斯高帕斯（Scopus）

• AlGaInP-based LEDs with ZnO nanostructures by successive ionic layer adsorption and reaction and hydrothermal methods

  Lin, N. M., Shei, S. C. & Chang, S-J., 2015 6月 23, 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015. Institute of Electrical and Electronics Engineers Inc., 7131953. (4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015).

  研究成果: Conference contribution

• AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer

  Chang, S. J., Zeng, X. F., Shei, S. C. & Li, S., 2013, 於: IEEE Journal of Quantum Electronics. 49, 10, p. 846-851 6 p., 6587778.

  研究成果: Article › 同行評審
  9 引文 斯高帕斯（Scopus）

• AlGaInP-based LEDs with a p⁺-GaP window layer and a thermally annealed ITO contact

  Lo, H. M., Shei, S. C., Zeng, X. F., Chang, S. J. & Lin, H. Y., 2011, 於: IEEE Journal of Quantum Electronics. 47, 6, p. 803-809 7 p., 5764940.

  研究成果: Article › 同行評審
  12 引文 斯高帕斯（Scopus）

• AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

  Chang, S. J., Sheu, J. K., Su, Y. K., Jou, M. J. & Chi, G. C., 1996 8月, 於: Japanese Journal of Applied Physics. 35, 8, p. 4199-4202 4 p.

  研究成果: Article › 同行評審
  12 引文 斯高帕斯（Scopus）

• AlGaInP/GaP heterostructures bonded with si substrate to serve as solar cells and light emitting diodes

  Yan, L. J., Yang, C. C., Lee, M. L., Tu, S. J., Chang, C. S. & Sheu, J. K., 2010, 於: Journal of the Electrochemical Society. 157, 4, p. H452-H454

  研究成果: Article › 同行評審
  6 引文 斯高帕斯（Scopus）

• AlgaePath: Comprehensive analysis of metabolic pathways using transcript abundance data from next-generation sequencing in green algae

  Zheng, H. Q., Chiang-Hsieh, Y. F., Chien, C. H., Hsu, B. K. J., Liu, T. L., Chen, C. N. N. & Chang, W. C., 2014 3月 14, 於: BMC genomics. 15, 1, 196.

  研究成果: Article › 同行評審
  26 引文 斯高帕斯（Scopus）

• Algae-derived hydrocolloids in foods: applications and health-related issues

  Liao, Y. C., Chang, C. C., Nagarajan, D., Chen, C. Y. & Chang, J. S., 2021, 於: Bioengineered. 12, 1, p. 3787-3801 15 p.

  研究成果: Review article › 同行評審

  開啟存取
  3 引文 斯高帕斯（Scopus）

• Algae cultivation in wastewater for biodiesel - A review

  Tan, C. H., Cheah, W. Y., Ling, T. C., Show, P. L., Juan, J. C. & Chang, J. S., 2015 10月, Chemical Engineering Transactions. Liu, X., Varbanov, P. S., Klemes, J. J., Wan Alwi, S. R. & Yong, J. Y. (編輯). Italian Association of Chemical Engineering - AIDIC, 卷 45. p. 1393-1398 6 p.

  研究成果: Chapter
  7 引文 斯高帕斯（Scopus）

• Al-Ga coating mechanism and discharge-charge characteristics of Li-Mn-O cathode powders at -30-55 °c

  Hung, F. Y. & Yang, K. Y., 2014 12月 15, 於: Journal of Power Sources. 268, p. 7-13 7 p.

  研究成果: Article › 同行評審
  6 引文 斯高帕斯（Scopus）

• AlGaAsSb/InGaAsSb phototransistors for spectral range around 2 μm

  Sulima, O. V., Refaat, T. F., Mauk, M. G., Cox, J. A., Li, J., Lohokare, S. K., Abedin, M. N., Singh, U. N. & Rand, J. A., 2004 6月 10, 於: Electronics Letters. 40, 12, p. 766-767 2 p.

  研究成果: Article › 同行評審
  14 引文 斯高帕斯（Scopus）

• AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with low temperature liquid phase deposited Al ₂O₃ gate insulator

  Basu, S., Singh, P. K., Sze, P. W. & Wang, Y. H., 2008, 於: Journal of Applied Physics. 104, 5, 054116.

  研究成果: Article › 同行評審
  5 引文 斯高帕斯（Scopus）

• AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric

  Lee, K. W., Sze, P. W., Wang, Y. H. & Houng, M. P., 2005 2月, 於: Solid-State Electronics. 49, 2, p. 213-217 5 p.

  研究成果: Article › 同行評審
  14 引文 斯高帕斯（Scopus）

• AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition

  Hung, C. W., Lin, H. L., Tsai, Y. Y., Lai, P. H., Fu, S. I., Chen, H. I. & Liu, W. C., 2006 2月 8, 於: Japanese Journal of Applied Physics. 45, 2 A, p. 680-684 5 p.

  研究成果: Article › 同行評審
  14 引文 斯高帕斯（Scopus）

• AlGaAs/InGaAs/GaAs heterostructureemitter and heterostructure-base transistor (HEHBT)

  Tsai, J. H., Cheng, S. Y., Laih, L. W. & Liu, W. C., 1996 1月 1, 於: Electronics Letters. 32, 18, p. 1720-1722 3 p.

  研究成果: Article › 同行評審
  4 引文 斯高帕斯（Scopus）

• AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy

  Liu, W. C. & Lour, W. S., 1991 7月, 於: Solid State Electronics. 34, 7, p. 717-722 6 p.

  研究成果: Article › 同行評審
  17 引文 斯高帕斯（Scopus）

• AlGaAs/GaAs Double-Heterostructure-Emitter Bipolar Transistor (DHEBT)

  Liu, W. C., Guo, D. F. & Lour, W. S., 1992 12月, 於: IEEE Transactions on Electron Devices. 39, 12, p. 2740-2744 5 p.

  研究成果: Article › 同行評審
  14 引文 斯高帕斯（Scopus）

• Alfv́n eigenmodes in reversed shear plasmas in JT-60U negative-ion-based neutral beam injection discharges

  Takechi, M., Fukuyama, A., Ishikawa, M., Cheng, C. Z., Shinohara, K., Ozeki, T., Kusama, Y., Takeji, S., Fujita, T., Oikawa, T., Suzuki, T., Oyama, N., Morioka, A., Gorelenkov, N. N., Kramer, G. J. & Nazikian, R., 2005 8月, 於: Physics of Plasmas. 12, 8, p. 1-7 7 p., 082509.

  研究成果: Article › 同行評審
  36 引文 斯高帕斯（Scopus）

• Alfvén eigenmodes driven by Alfvénic beam ions in JT-60U

  Shinohara, K., Kusama, Y., Takechi, M., Morioka, A., Ishikawa, M., Oyama, N., Tobita, K., Ozeki, T., Takeji, S., Moriyama, S., Fujita, T., Oikawa, T., Suzuki, T., Nishitani, T., Kondoh, T., Lee, S., Kuriyama, M., Kramer, G. J., Gorelenkov, N. N., Nazikian, R. 及其他3, Cheng, C. Z., Fu, G. Y. & Fukuyama, A., 2001 5月, 於: Nuclear Fusion. 41, 5, p. 603-612 10 p.

  研究成果: Article › 同行評審
  85 引文 斯高帕斯（Scopus）

• Alfvén eigenmode and energetic particle research in JT-60U

  Kimura, H., Kusama, Y., Saigusa, M., Kramer, G. J., Tobita, K., Nemoto, M., Kondoh, T., Nishitani, T., Da Costa, O., Ozeki, T., Oikawa, T., Moriyama, S., Morioka, A., Fu, G. Y., Cheng, C. Z. & Afanas'ev, V. I., 1998 12月 1, 於: Nuclear Fusion. 38, 9, p. 1303-1314 12 p.

  研究成果: Article › 同行評審
  119 引文 斯高帕斯（Scopus）