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Article

Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

Chen, H. C., Zhou, K. J., Chen, P. H., Chen, G. F., Huang, S. P., Chen, J. J., Kuo, C. W., Tsao, Y. C., Tai, M. C., Chu, A. K., Lai, W. C. & Chang, T. C., 2019 八月, 於 : IEEE Electron Device Letters. 40, 8, p. 1281-1284 4 p., 8736827.

研究成果: Article

Thin film transistors
Shielding
Electric grounding
Threshold voltage
Computer aided design
5 引文 (Scopus)

AlGaN-based ultraviolet photodetector with micropillar structures

Lai, W-C., Peng, L. C., Chen, C. C., Sheu, J-K. & Shei, S. C., 2010 三月 26, 於 : Applied Physics Letters. 96, 10, 102104.

研究成果: Article

photometers
templates
cathodoluminescence
wavelengths
valleys

An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

Chen, G. F., Chen, H. C., Chang, T. C., Huang, S. P., Chen, H. M., Liao, P. Y., Chen, J. J., Kuo, C. W., Lai, W. C., Chu, A. K., Lin, S. C., Yeh, C. Y., Chang, C. S., Tsai, C. M., Yu, M. C. & Zhang, S., 2019 六月, 於 : IEEE Transactions on Electron Devices. 66, 6, p. 2614-2619 6 p., 8689093.

研究成果: Article

Thin film transistors
Amorphous silicon
Band structure
Electric potential
Electrons
6 引文 (Scopus)

Catalyst-free ZnO nanowires grown on a-plane GaN

Chen, C. W., Pan, C. J., Tsao, F. C., Liu, Y. L., Kuo, C. W., Kuo, C. H., Chi, G. C., Chen, P. H., Lai, W. C., Hsueh, T. H., Tun, C. J., Chang, C. Y., Pearton, S. J. & Ren, F., 2010 二月 4, 於 : Vacuum. 84, 6, p. 803-806 4 p.

研究成果: Article

Nanowires
Chemical vapor deposition
nanowires
templates
Organic Chemicals
16 引文 (Scopus)

Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration

Yang, C. C., Jang, C. H., Sheu, J-K., Lee, M. L., Tu, S. J., Huang, F. W., Yeh, Y. H. & Lai, W-C., 2011 七月 4, 於 : Optics Express. 19, 104, p. A695-A700

研究成果: Article

photovoltaic cells
concentrators
solar cells
sun
sapphire
6 引文 (Scopus)

Characterization of n-gan with naturally textured surface for photoelectrochemical hydrogen generation

Liu, S. Y., Sheu, J. K., Ye, J. C., Tu, S. J., Hsu, C. K., Lee, M. L., Kuo, C. H. & Lai, W. C., 2010 十一月 24, 於 : Journal of the Electrochemical Society. 157, 12, p. H1106-H1109

研究成果: Article

Hydrogen
hydrogen
Ohmic contacts
Epitaxial layers
electric contacts
1 引文 (Scopus)

Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity

Chang, C. W., Wadekar, P. V., Guo, S. S., Cheng, Y. J., Chou, M., Huang, H. C., Hsieh, W. C., Lai, W. C., Chen, Q. Y. & Tu, L. W., 2018 一月 1, 於 : Journal of Electronic Materials. 47, 1, p. 359-367 9 p.

研究成果: Article

Gallium nitride
gallium nitrides
Surface morphology
Nitrogen
Tuning
3 引文 (Scopus)

Conversion efficiency improvement of InGaN/GaN multiple-quantum-well solar cells with Ex Situ AlN nucleation layer

Yu, C. T., Lai, W. C., Yen, C. H., Chang, C. W., Tu, L. W. & Chang, S. J., 2015 五月 1, 於 : IEEE Transactions on Electron Devices. 62, 5, p. 1473-1477 5 p., 7078911.

研究成果: Article

Semiconductor quantum wells
Conversion efficiency
Solar cells
Nucleation
Sun
25 引文 (Scopus)
interlayers
solar cells
room temperature
volatile organic compounds
sulfonates
3 引文 (Scopus)

Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Chen, H. C., Chang, T. C., Lai, W. C., Chen, G. F., Chen, B. W., Hung, Y. J., Chang, K. J., Cheng, K. C., Huang, C. S., Chen, K. K., Lu, H. H. & Lin, Y. H., 2018 八月 8, 於 : ACS Applied Materials and Interfaces. 10, 31, p. 25866-25870 5 p.

研究成果: Article

Thin film transistors
Oxide films
Metals
Annealing
Zinc Oxide
10 引文 (Scopus)

Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes

Shih, Y. H., Chang, J. Y., Sheu, J-K., Kuo, Y. K., Chen, F. M., Lee, M. L. & Lai, W-C., 2016 三月 1, 於 : IEEE Transactions on Electron Devices. 63, 3, p. 1141-1147 7 p., 7399737.

研究成果: Article

Diodes
Electrons
Light emitting diodes
Chemical analysis
Valence bands
1 引文 (Scopus)

Double superstructures in InGaN/GaN nano-pyramid arrays

Chang, C. Y., Li, H., Hong, K. B., Yang, Y. Y., Lai, W. C. & Lu, T. C., 2015 八月 11, 於 : Superlattices and Microstructures. 86, p. 275-279 5 p.

研究成果: Article

pyramids
Semiconductor quantum wells
Stark effect
Indium
Quantum confinement
6 引文 (Scopus)

Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on si-implanted GaN templates

Lee, M. L., Yeh, Y. H., Tu, S. J., Chen, P. C., Wu, M. J., Lai, W. C. & Sheu, J. K., 2013 九月 9, 於 : Optics Express. 21, 105, p. A864-A871

研究成果: Article

pyramids
light emitting diodes
templates
wavelengths
cathodoluminescence
spacers
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
12 引文 (Scopus)
light emitting diodes
injection
electrons
output
power efficiency
6 引文 (Scopus)
Aluminum Oxide
Sapphire
Light emitting diodes
sapphire
light emitting diodes

Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells

Tsai, C. M., Chang, C. S., Xu, Z., Huang, W. P., Lai, W-C. & Bow, J. S., 2019 四月 15, 於 : OSA Continuum. 2, 4, p. 1207-1214 8 p.

研究成果: Article

Gallium nitride
Indium
Aluminum nitride
gallium nitrides
aluminum nitrides

Efficiency improvement of short-period InGaN/GaN multiple-quantum well solar cells with H2 in the GaN cap layer

Lai, W-C., Yang, Y. Y. & Horng, R. H., 2013 十二月 2, 於 : IEEE/OSA Journal of Display Technology. 9, 12, p. 953-956 4 p., 6542659.

研究成果: Article

caps
Semiconductor quantum wells
Solar cells
solar cells
quantum wells
7 引文 (Scopus)
fullerenes
heterojunctions
solar cells
methylidyne
electrodes
7 引文 (Scopus)

Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices

Chen, J. T., Lai, W-C., Chen, C. H., Yang, Y. Y., Sheu, J-K. & Lai, L. W., 2011 六月 6, 於 : Optics Express. 19, 12, p. 11873-11879 7 p.

研究成果: Article

electroluminescence
nanocomposites
nanocrystals
distributing
radiative recombination
6 引文 (Scopus)

Enhanced internal quantum efficiency in graphene/InGaN multiple-quantum- well hybrid structures

Huang, H. M., Chang, C. Y., Hsu, Y. S., Lu, T. C., Lan, Y. P. & Lai, W. C., 2012 八月 6, 於 : Applied Physics Letters. 101, 6, 061905.

研究成果: Article

hybrid structures
quantum efficiency
graphene
quantum wells
radiative recombination
8 引文 (Scopus)

Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers

Sheu, J-K., Tu, S. J., Lee, M. L., Yeh, Y. H., Yang, C. C., Huang, F. W., Lai, W-C., Chen, C. W. & Chi, G. C., 2011 十月 1, 於 : IEEE Electron Device Letters. 32, 10, p. 1400-1402 3 p., 5967887.

研究成果: Article

Light emitting diodes
Air
Epitaxial layers
Photons
6 引文 (Scopus)

Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells

Tu, S. J., Sheu, J-K., Lee, M. L., Yang, C. C., Chang, K. H., Yeh, Y. H., Huang, F. W. & Lai, W-C., 2011 六月 20, 於 : Optics Express. 19, 13, p. 12719-12726 8 p.

研究成果: Article

light emitting diodes
output
templates
ray tracing
escape
27 引文 (Scopus)

Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

Yang, C. C., Sheu, J-K., Liang, X. W., Huang, M. S., Lee, M. L., Chang, K. H., Tu, S. J., Huang, F. W. & Lai, W-C., 2010 七月 12, 於 : Applied Physics Letters. 97, 2, 021113.

研究成果: Article

augmentation
electric fields
air masses
volatile organic compounds
barrier layers

Formation of Hump Effect Due to Top-Gate Bias Stress in Organic Thin-Film Transistors

Chen, H. C., Tsao, Y. C., Chu, A. K., Huang, H. C., Lai, W. C., Chen, G. F., Huang, S. P., Chang, T. C., Chen, P. H., Chen, J. J., Kuo, C. W., Zhou, K. J. & Hung, Y. H., 2019 十二月, 於 : IEEE Electron Device Letters. 40, 12, p. 1941-1944 4 p., 8880614.

研究成果: Article

Thin film transistors
Electric fields
Degradation
Electron traps
Gate dielectrics

Ga-doped ZnO/GaN Schottky barrier UV band-pass photodetector with a low-temperature-grown GaN cap layer

Chang, K. H., Sheu, J-K., Lee, M. L., Kang, K. S., Huang, J. F., Wang, W. L. & Lai, W-C., 2010 四月 1, 於 : Japanese Journal of Applied Physics. 49, 4 PART 2, 04DF12.

研究成果: Article

Photodetectors
caps
photometers
Dark currents
dark current
11 引文 (Scopus)
gallium nitrides
voids
sapphire
light emitting diodes
air
6 引文 (Scopus)
Light emitting diodes
light emitting diodes
blue shift
Wavelength
output
8 引文 (Scopus)

GaN-based LEDs grown on HVPE growth high crystalline quality thick GaN template

Lin, D. W., Lin, C. C., Chiu, C. H., Lee, C. Y., Yang, Y. Y., Li, Z. Y., Lai, W. C., Lu, T. C., Kuo, H. C. & Wang, S. C., 2011 十月 18, 於 : Journal of the Electrochemical Society. 158, 11, p. H1103-H1106

研究成果: Article

Gallium nitride
Vapor phase epitaxy
Hydrides
Light emitting diodes
Crystalline materials
4 引文 (Scopus)

GaN-based LEDs with air voids prepared by laser scribing and chemical etching

Shei, S. C., Lo, H. M., Lai, W. C., Lin, W. C. & Chang, S. J., 2011 八月 5, 於 : IEEE Photonics Technology Letters. 23, 16, p. 1172-1174 3 p., 5782933.

研究成果: Article

scoring
Light emitting diodes
voids
Etching
light emitting diodes
7 引文 (Scopus)

GaN-based LEDs with air voids prepared by one-step MOCVD growth

Lin, N. M., Chang, S. J., Shei, S. C., Lai, W. C., Yang, Y. Y., Lin, W. C. & Lo, H. M., 2011 九月 15, 於 : Journal of Lightwave Technology. 29, 18, p. 2831-2835 5 p., 5960753.

研究成果: Article

metalorganic chemical vapor deposition
voids
light emitting diodes
etching
air
20 引文 (Scopus)

GaN-based LEDs with AZO:Y upper contact

Chen, P. H., Lai, W-C., Peng, L. C., Kuo, C. H., Yeh, C. L., Sheu, J-K. & Tun, C. J., 2010 一月 1, 於 : IEEE Transactions on Electron Devices. 57, 1, p. 134-139 6 p., 5313952.

研究成果: Article

Diodes
Ytterbium
Annealing
Zinc Oxide
Aluminum Oxide
4 引文 (Scopus)

GaN-based light-emitting diodes on electrochemically etched n --GaN template

Lai, W. C., Yen, C. H., Li, J. Z., Yang, Y. Y., Cheng, H. E., Chang, S. J. & Li, S., 2013 八月 5, 於 : IEEE Photonics Technology Letters. 25, 15, p. 1531-1534 4 p., 6548046.

研究成果: Article

Light emitting diodes
light emitting diodes
templates
Electrochemical etching
voids
2 引文 (Scopus)

GaN-based light-emitting diodes with air gap array and patterned sapphire substrate

Lai, W-C., Yang, Y. Y., Chen, Y. H. & Sheu, J-K., 2011 八月 19, 於 : IEEE Photonics Technology Letters. 23, 17, p. 1207-1209 3 p., 5783297.

研究成果: Article

Aluminum Oxide
Sapphire
Light emitting diodes
sapphire
light emitting diodes
28 引文 (Scopus)

GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures

Lai, W. C., Yang, Y. Y., Peng, L. C., Yang, S. W., Lin, Y. R. & Sheu, J. K., 2010 八月 23, 於 : Applied Physics Letters. 97, 8, 081103.

研究成果: Article

light emitting diodes
air
output
leakage
light scattering
15 引文 (Scopus)

GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

Lai, W. C., Lin, C. N., Lai, Y. C., Yu, P., Chi, G. C. & Chang, S. J., 2014 三月 10, 於 : Optics Express. 22, 5, p. A396-A401

研究成果: Article

gallium nitrides
indium oxides
tin oxides
graphene
light emitting diodes
12 引文 (Scopus)
light emitting diodes
decomposition
lasers
balls
lenses
7 引文 (Scopus)

GaN-based light-emitting diodes with pillar structures around the mesa region

Chen, P. H., Chang, L. C., Tsai, C. H., Lee, Y. C., Lai, W. C., Wu, M. L., Kuo, C. H. & Sheu, J. K., 2010 四月 13, 於 : IEEE Journal of Quantum Electronics. 46, 7, p. 1066-1071 6 p., 5440023.

研究成果: Article

mesas
Light emitting diodes
light emitting diodes
Waveguides
waveguides

GaN-based light-emitting diodes with step graded-refractive index (ZnO x(SiO2)1-x micropillar array

Chang, H. M., Yang, Y. Y., Lai, W. C., Li, S., Lin, Y. R., Jiao, Z. Y. & Chang, S. J., 2013 一月 1, 於 : IEEE/OSA Journal of Display Technology. 9, 5, p. 353-358 6 p., 6308728.

研究成果: Article

Light emitting diodes
Refractive index
light emitting diodes
refractivity
ITO (semiconductors)
1 引文 (Scopus)

GaN-Based light-emitting-diode with a p-InGaN layer

Chen, P. H., Kuo, C. H., Lai, W. C., Chen, Y. A., Chang, L. C. & Chang, S. J., 2014 三月 1, 於 : IEEE/OSA Journal of Display Technology. 10, 3, p. 204-207 4 p., 6679256.

研究成果: Article

Light emitting diodes
light emitting diodes
Electric potential
electric potential
40 引文 (Scopus)

GaN-based light-emitting diode with sputtered AlN nucleation layer

Yen, C. H., Lai, W-C., Yang, Y. Y., Wang, C. K., Ko, T. K., Hon, S. J. & Chang, S-J., 2012 二月 6, 於 : IEEE Photonics Technology Letters. 24, 4, p. 294-296 3 p., 6092445.

研究成果: Article

Light emitting diodes
Nucleation
light emitting diodes
nucleation
Leakage currents
9 引文 (Scopus)

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

Chang, H. M., Lai, W. C., Chen, W. S. & Chang, S. J., 2015 四月 6, 於 : Optics Express. 23, 7, p. A337-A345

研究成果: Article

ultraviolet radiation
light emitting diodes
quantum wells
output
wavelengths
13 引文 (Scopus)

GaN-Based ultraviolet light emitting diodes with Ex situ sputtered AlN nucleation layer

Lai, W. C., Yen, C. H., Yang, Y. Y., Wang, C. K. & Chang, S. J., 2013 六月 6, 於 : IEEE/OSA Journal of Display Technology. 9, 11, p. 895-899 5 p., 6522544.

研究成果: Article

Gallium nitride
Aluminum nitride
gallium nitrides
aluminum nitrides
ultraviolet radiation
5 引文 (Scopus)

GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer

Huang, Z. D., Weng, W. Y., Chang, S-J., Chiu, C. J., Hsueh, T. J., Lai, W-C. & Wu, S. L., 2011 六月 1, 於 : Journal of the Electrochemical Society. 158, 7

研究成果: Article

Photodetectors
Metals
Semiconductor materials
Leakage currents
Crystalline materials
14 引文 (Scopus)

GaN MSM UV Photodetector with Sputtered AlN Nucleation Layer

Wang, C. K., Chiou, Y. Z., Chang, S. J., Lai, W. C., Chang, S. P., Yen, C. H. & Hung, C. C., 2015 九月, 於 : IEEE Sensors Journal. 15, 9, p. 4743-4748 6 p., 7093119.

研究成果: Article

Photodetectors
photometers
Nucleation
nucleation
Semiconductor materials
3 引文 (Scopus)

GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer

Huang, Z. D., Weng, W. Y., Chang, S-J., Hung, S. C., Chiu, C. J., Hsueh, T. J., Lai, W-C. & Wu, S. L., 2011 十一月 2, 於 : IEEE Sensors Journal. 11, 11, p. 2895-2901 7 p., 5751200.

研究成果: Article

Photodetectors
photometers
Leakage currents
rejection
leakage
1 引文 (Scopus)

GaN schottky barrier photodetectors with a semi-insulating AlInN cap layer

Chang, S-J., Weng, W. Y., Lai, W-C., Hsueh, T. J., Shei, S. C., Zeng, X. F. & Wu, S. L., 2010 三月 26, 於 : Journal of the Electrochemical Society. 157, 4

研究成果: Article

Photodetectors
caps
Leakage currents
photometers
rejection
16 引文 (Scopus)

Hydrogen gas generation using n-GaN photoelectrodes with immersed indium tin oxide ohmic contacts

Liu, S. Y., Lin, Y. C., Ye, J. C., Tu, S. J., Huang, F. W., Lee, M. L., Lai, W. C. & Sheu, J. K., 2011 十一月 7, 於 : Optics Express. 19, 106, p. A1196-A1201

研究成果: Article

indium oxides
tin oxides
electric contacts
hydrogen
gases
3 引文 (Scopus)

III-nitride-based light-emitting diodes with GaN micropillars around mesa and patterned substrate

Peng, L. C., Lai, W-C., Chang, M. N., Hsueh, T. H., Shei, S. C. & Sheu, J-K., 2010 一月 1, 於 : IEEE Transactions on Electron Devices. 57, 1, p. 140-144 5 p., 5345812.

研究成果: Article

Nitrides
Light emitting diodes
Substrates
Aluminum Oxide
Sapphire
8 引文 (Scopus)

Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation

Liu, S. Y., Sheu, J. K., Lee, M. L., Lin, Y. C., Tu, S. J., Huang, F. W. & Lai, W. C., 2012 三月 12, 於 : Optics Express. 20, 102, p. A190-A196

研究成果: Article

indium oxides
tin oxides
electric contacts
hydrogen
ITO (semiconductors)