尋找研究成果

搜尋概念
已選取的篩選器
2013

GaN-based light-emitting diodes with step graded-refractive index (ZnO x(SiO2)1-x micropillar array

Chang, H. M., Yang, Y. Y., Lai, W. C., Li, S., Lin, Y. R., Jiao, Z. Y. & Chang, S. J., 2013 一月 1, 於 : IEEE/OSA Journal of Display Technology. 9, 5, p. 353-358 6 p., 6308728.

研究成果: Article

Light emitting diodes
Refractive index
light emitting diodes
refractivity
ITO (semiconductors)
13 引文 (Scopus)

GaN-Based ultraviolet light emitting diodes with Ex situ sputtered AlN nucleation layer

Lai, W. C., Yen, C. H., Yang, Y. Y., Wang, C. K. & Chang, S. J., 2013 六月 6, 於 : IEEE/OSA Journal of Display Technology. 9, 11, p. 895-899 5 p., 6522544.

研究成果: Article

Gallium nitride
Aluminum nitride
gallium nitrides
aluminum nitrides
ultraviolet radiation
14 引文 (Scopus)

Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer

Sheu, J-K., Huang, F. W., Lee, C. H., Lee, M. L., Yeh, Y. H., Chen, P. C. & Lai, W-C., 2013 八月 5, 於 : Applied Physics Letters. 103, 6, 063906.

研究成果: Article

solar cells
air masses
short circuit currents
open circuit voltage
spectral sensitivity
11 引文 (Scopus)

Improved output power of GaN-based blue LEDs by forming air voids on Ar-implanted sapphire substrate

Sheu, J-K., Yeh, Y. H., Tu, S. J., Lee, M. L., Chen, P. C. & Lai, W-C., 2013 三月 19, 於 : Journal of Lightwave Technology. 31, 8, p. 1318-1322 5 p., 6464504.

研究成果: Article

voids
sapphire
light emitting diodes
output
air
18 引文 (Scopus)

Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

Tsai, Y. L., Lin, C. C., Han, H. V., Chang, C. K., Chen, H. C., Chen, K. J., Lai, W-C., Sheu, J-K., Lai, F. I., Yu, P. & Kuo, H. C., 2013 八月 26, 於 : Solar Energy Materials and Solar Cells. 117, p. 531-536 6 p.

研究成果: Article

Distributed Bragg reflectors
Semiconductor quantum wells
Semiconductor quantum dots
Solar cells
Photons
7 引文 (Scopus)

InGaN Flip-Chip light-emitting diodes with embedded air voids as light-scattering layer

Yeh, Y. H., Sheu, J. K., Lee, M. L., Chen, P. C., Yang, Y. C., Yen, C. H. & Lai, W. C., 2013 十二月 1, 於 : IEEE Electron Device Letters. 34, 12, p. 1542-1544 3 p., 6650115.

研究成果: Article

Light scattering
Aluminum Oxide
Light emitting diodes
Sapphire
Air
7 引文 (Scopus)

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting

Liu, S. Y., Sheu, J. K., Lin, Y. C., Chen, Y. T., Tu, S. J., Lee, M. L. & Lai, W. C., 2013 十一月 4, 於 : Optics Express. 21, 106, p. A991-A996

研究成果: Article

water splitting
solar cells
electrodes
hydrogen production
ITO (semiconductors)
5 引文 (Scopus)

InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes

Yu, C. T., Lai, W-C., Yen, C. H. & Chang, S-J., 2013 十一月 26, 於 : Optical Materials Express. 3, 11, p. 1952-1959 8 p.

研究成果: Article

Light emitting diodes
Indium
Adatoms
Electroluminescence
Leakage currents
10 引文 (Scopus)

Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration

Chang, J. Y., Chen, F. M., Kuo, Y. K., Shih, Y. H., Sheu, J-K., Lai, W-C. & Liu, H., 2013 八月 23, 於 : Optics Letters. 38, 16, p. 3158-3161 4 p.

研究成果: Article

light emitting diodes
polarization
configurations
quantum wells
Stark effect
8 引文 (Scopus)
photometers
buffers
low frequencies
metals
nanocomposites
6 引文 (Scopus)

Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy

Sheu, J-K., Huang, F. W., Liu, Y. H., Chen, P. C., Yeh, Y. H., Lee, M. L. & Lai, W-C., 2013 二月 18, 於 : Applied Physics Letters. 102, 7, 071107.

研究成果: Article

gallium nitrides
vapor phase epitaxy
manganese
spectral sensitivity
photometers
14 引文 (Scopus)
photometers
buffers
rejection
nanocomposites
metals
2012
6 引文 (Scopus)

Enhanced internal quantum efficiency in graphene/InGaN multiple-quantum- well hybrid structures

Huang, H. M., Chang, C. Y., Hsu, Y. S., Lu, T. C., Lan, Y. P. & Lai, W. C., 2012 八月 6, 於 : Applied Physics Letters. 101, 6, 061905.

研究成果: Article

hybrid structures
quantum efficiency
graphene
quantum wells
radiative recombination
11 引文 (Scopus)
gallium nitrides
voids
sapphire
light emitting diodes
air

GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching

Lin, N. M., Shei, S. C., Chang, S. J., Lai, W. C., Yang, Y. Y., Lin, W. C. & Lo, H. M., 2012 一月 1, Equipment Manufacturing Technology. p. 542-546 5 p. (Advanced Materials Research; 卷 422).

研究成果: Conference contribution

Sapphire
Light emitting diodes
Cones
Etching
Substrates
12 引文 (Scopus)
light emitting diodes
decomposition
lasers
balls
lenses
40 引文 (Scopus)

GaN-based light-emitting diode with sputtered AlN nucleation layer

Yen, C. H., Lai, W-C., Yang, Y. Y., Wang, C. K., Ko, T. K., Hon, S. J. & Chang, S-J., 2012 二月 6, 於 : IEEE Photonics Technology Letters. 24, 4, p. 294-296 3 p., 6092445.

研究成果: Article

Light emitting diodes
Nucleation
light emitting diodes
nucleation
Leakage currents
8 引文 (Scopus)

Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation

Liu, S. Y., Sheu, J. K., Lee, M. L., Lin, Y. C., Tu, S. J., Huang, F. W. & Lai, W. C., 2012 三月 12, 於 : Optics Express. 20, 102, p. A190-A196

研究成果: Article

indium oxides
tin oxides
electric contacts
hydrogen
ITO (semiconductors)
6 引文 (Scopus)

Improved output power of InGaN LEDs by lateral overgrowth on Si-implanted n-GaN surface to form air gaps

Tu, S. J., Lee, M. L., Yeh, Y. H., Huang, F. W., Chen, P. C., Lai, W. C., Chen, C. W., Chi, G. C. & Sheu, J. K., 2012 六月 6, 於 : IEEE Journal of Quantum Electronics. 48, 8, p. 1004-1009 6 p., 6203433.

研究成果: Article

Light emitting diodes
light emitting diodes
output
air
Air
32 引文 (Scopus)

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes

Chen, J. T., Lai, W. C., Kao, Y. J., Yang, Y. Y. & Sheu, J. K., 2012 二月 27, 於 : Optics Express. 20, 5, p. 5689-5695 7 p.

研究成果: Article

light emitting diodes
augmentation
lasers
output
microbalances

Mn-doped GaN as photoelectrodes for the photoelectrolysis of water under visible light

Lin, S. Y., Sheu, J. K., Lin, Y. C., Tu, S. J., Huang, F. W., Lee, M. L. & Lai, W. C., 2012 九月 10, 於 : Optics Express. 20, 105, p. A678-A683

研究成果: Article

photocurrents
hydrogen
cells
water
water splitting
7 引文 (Scopus)

Mn-doped GaN as photoelectrodes for the photoelectrolysis of water under visible light

Liu, S. Y., Sheu, J. K., Lin, Y. C., Tu, S. J., Huang, F. W., Lee, M. L. & Lai, W. C., 2012 九月 10, 於 : Optics Express. 20, 19, p. A678-A683

研究成果: Article

photocurrents
hydrogen
cells
water
water splitting
5 引文 (Scopus)

Optical properties of Mn in regrown GaN-based epitaxial layers

Huang, F. W., Sheu, J. K., Tu, S. J., Chen, P. C., Yeh, Y. H., Lee, M. L., Lai, W. C., Tsai, W. C. & Chang, W. H., 2012 四月 1, 於 : Optical Materials Express. 2, 4, p. 469-477 9 p.

研究成果: Article

Epitaxial layers
Manganese
Optical properties
Data storage equipment
Semiconductor quantum wells
4 引文 (Scopus)

Sputtered ZnO-SiO2 nanocomposite light-emitting diodes with flat-top nanosecond laser treatment

Chen, J. T., Lai, W. C., Chen, C. H., Yang, Y. Y., Sheu, J. K., Lin, K. W. & Lai, L. W., 2012 八月 27, 於 : Optics Express. 20, 18, p. 19635-19642 8 p.

研究成果: Article

nanocomposites
light emitting diodes
lasers
electroluminescence
nanoclusters
8 引文 (Scopus)

Vertical InGaN light-emitting diodes with a sapphire-face-up structure

Yang, Y. C., Sheu, J. K., Lee, M. L., Tu, S. J., Huang, F. W., Lai, W. C., Hon, S. J. & Ko, T. K., 2012 一月 2, 於 : Optics Express. 20, 101, p. A119-A124

研究成果: Article

sapphire
light emitting diodes
wafers
output
conductive heat transfer
7 引文 (Scopus)

Vertical InGaN light-emitting diode with a retained patterned sapphire layer

Yang, Y. C., Sheu, J-K., Lee, M. L., Yen, C. H., Lai, W-C., Hon, S. J. & Ko, T. K., 2012 十一月 5, 於 : Optics Express. 20, 106, p. A1019-A1025

研究成果: Article

sapphire
light emitting diodes
conductive heat transfer
high current
chips
2011

Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers

Yang, C. C., Sheu, J-K., Huang, M. S., Tu, S. J., Huang, F. W., Chang, K. H., Lee, M. L. & Lai, W-C., 2011 五月 13, Gallium Nitride Materials and Devices VI. 79391J. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7939).

研究成果: Conference contribution

InGaN
Superlattices
Aluminum Oxide
Sapphire
Buffer layers
16 引文 (Scopus)

Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration

Yang, C. C., Jang, C. H., Sheu, J-K., Lee, M. L., Tu, S. J., Huang, F. W., Yeh, Y. H. & Lai, W-C., 2011 七月 4, 於 : Optics Express. 19, 104, p. A695-A700

研究成果: Article

photovoltaic cells
concentrators
solar cells
sun
sapphire
7 引文 (Scopus)

Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices

Chen, J. T., Lai, W-C., Chen, C. H., Yang, Y. Y., Sheu, J-K. & Lai, L. W., 2011 六月 6, 於 : Optics Express. 19, 12, p. 11873-11879 7 p.

研究成果: Article

electroluminescence
nanocomposites
nanocrystals
distributing
radiative recombination

Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts

Liu, S. Y., Ye, J. C., Lin, Y. C., Chang, K. H., Lee, M. L., Lai, W. C. & Sheu, J. K., 2011 五月 13, Gallium Nitride Materials and Devices VI. 793925. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7939).

研究成果: Conference contribution

Ohmic contacts
Tin oxides
indium oxides
Indium
tin oxides
8 引文 (Scopus)

Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers

Sheu, J-K., Tu, S. J., Lee, M. L., Yeh, Y. H., Yang, C. C., Huang, F. W., Lai, W-C., Chen, C. W. & Chi, G. C., 2011 十月 1, 於 : IEEE Electron Device Letters. 32, 10, p. 1400-1402 3 p., 5967887.

研究成果: Article

Light emitting diodes
Air
Epitaxial layers
Photons
6 引文 (Scopus)

Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells

Tu, S. J., Sheu, J-K., Lee, M. L., Yang, C. C., Chang, K. H., Yeh, Y. H., Huang, F. W. & Lai, W-C., 2011 六月 20, 於 : Optics Express. 19, 13, p. 12719-12726 8 p.

研究成果: Article

light emitting diodes
output
templates
ray tracing
escape
8 引文 (Scopus)

GaN-based LEDs grown on HVPE growth high crystalline quality thick GaN template

Lin, D. W., Lin, C. C., Chiu, C. H., Lee, C. Y., Yang, Y. Y., Li, Z. Y., Lai, W. C., Lu, T. C., Kuo, H. C. & Wang, S. C., 2011 十月 18, 於 : Journal of the Electrochemical Society. 158, 11, p. H1103-H1106

研究成果: Article

Gallium nitride
Vapor phase epitaxy
Hydrides
Light emitting diodes
Crystalline materials
4 引文 (Scopus)

GaN-based LEDs with air voids prepared by laser scribing and chemical etching

Shei, S. C., Lo, H. M., Lai, W. C., Lin, W. C. & Chang, S. J., 2011 八月 5, 於 : IEEE Photonics Technology Letters. 23, 16, p. 1172-1174 3 p., 5782933.

研究成果: Article

scoring
Light emitting diodes
voids
Etching
light emitting diodes
7 引文 (Scopus)

GaN-based LEDs with air voids prepared by one-step MOCVD growth

Lin, N. M., Chang, S. J., Shei, S. C., Lai, W. C., Yang, Y. Y., Lin, W. C. & Lo, H. M., 2011 九月 15, 於 : Journal of Lightwave Technology. 29, 18, p. 2831-2835 5 p., 5960753.

研究成果: Article

metalorganic chemical vapor deposition
voids
light emitting diodes
etching
air
2 引文 (Scopus)

GaN-based light-emitting diodes with air gap array and patterned sapphire substrate

Lai, W-C., Yang, Y. Y., Chen, Y. H. & Sheu, J-K., 2011 八月 19, 於 : IEEE Photonics Technology Letters. 23, 17, p. 1207-1209 3 p., 5783297.

研究成果: Article

Aluminum Oxide
Sapphire
Light emitting diodes
sapphire
light emitting diodes
5 引文 (Scopus)

GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer

Huang, Z. D., Weng, W. Y., Chang, S-J., Chiu, C. J., Hsueh, T. J., Lai, W-C. & Wu, S. L., 2011 六月 1, 於 : Journal of the Electrochemical Society. 158, 7

研究成果: Article

Photodetectors
Metals
Semiconductor materials
Leakage currents
Crystalline materials
3 引文 (Scopus)

GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer

Huang, Z. D., Weng, W. Y., Chang, S-J., Hung, S. C., Chiu, C. J., Hsueh, T. J., Lai, W-C. & Wu, S. L., 2011 十一月 2, 於 : IEEE Sensors Journal. 11, 11, p. 2895-2901 7 p., 5751200.

研究成果: Article

Photodetectors
photometers
Leakage currents
rejection
leakage
16 引文 (Scopus)

Hydrogen gas generation using n-GaN photoelectrodes with immersed indium tin oxide ohmic contacts

Liu, S. Y., Lin, Y. C., Ye, J. C., Tu, S. J., Huang, F. W., Lee, M. L., Lai, W. C. & Sheu, J. K., 2011 十一月 7, 於 : Optics Express. 19, 106, p. A1196-A1201

研究成果: Article

indium oxides
tin oxides
electric contacts
hydrogen
gases
5 引文 (Scopus)

Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates

Yang, C. C., Sheu, J-K., Kuo, C. H., Huang, M. S., Tu, S. J., Huang, F. W., Lee, M. L., Yeh, Y. H., Liang, X. W. & Lai, W-C., 2011 四月 1, 於 : IEEE Electron Device Letters. 32, 4, p. 536-538 3 p., 5719623.

研究成果: Article

Aluminum Oxide
Sapphire
Conversion efficiency
Substrates
Photovoltaic cells
13 引文 (Scopus)
Light emitting diodes
Bias currents
Laser pulses
Current density
Heating
9 引文 (Scopus)

Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mndoped GaN intermediate band photodetection

Wen Huang, F., Kong Sheu, J., Lun Lee, M., Ju Tu, S., Chih Lai, W., Che Tsai, W. & Hao Chang, W., 2011 十一月 7, 於 : Optics Express. 19, 106, p. A1211-A1218

研究成果: Article

quantum wells
photoluminescence
photons
up-converters
carrier injection
2 引文 (Scopus)

Optical and electrical properties of μ-Slice InGaN/GaN light emitting diodes shaped by focused ion beam process

Hsu, C. K., Sheu, J. K., Wang, J. K., Lee, M. L., Chang, K. H., Tu, S. J. & Lai, W. C., 2011 三月 1, 於 : Applied Physics Express. 4, 3, 032104.

研究成果: Article

Focused ion beams
Light emitting diodes
Electric properties
light emitting diodes
Optical properties
5 引文 (Scopus)

The influence of a piezoelectric field on the dynamic performance of gan-based green light-emitting diodes with an InGaN insertion layer

Shi, J. W., Kuo, F. M., Huang, H. W., Sheu, J-K., Yang, C. C., Lai, W-C. & Lee, M. L., 2011 五月 1, 於 : IEEE Electron Device Letters. 32, 5, p. 656-658 3 p., 5735185.

研究成果: Article

Bias currents
Light emitting diodes
Current density
Screening
Pumps
2010
5 引文 (Scopus)

AlGaN-based ultraviolet photodetector with micropillar structures

Lai, W-C., Peng, L. C., Chen, C. C., Sheu, J-K. & Shei, S. C., 2010 三月 26, 於 : Applied Physics Letters. 96, 10, 102104.

研究成果: Article

photometers
templates
cathodoluminescence
wavelengths
valleys
6 引文 (Scopus)

Catalyst-free ZnO nanowires grown on a-plane GaN

Chen, C. W., Pan, C. J., Tsao, F. C., Liu, Y. L., Kuo, C. W., Kuo, C. H., Chi, G. C., Chen, P. H., Lai, W. C., Hsueh, T. H., Tun, C. J., Chang, C. Y., Pearton, S. J. & Ren, F., 2010 二月 4, 於 : Vacuum. 84, 6, p. 803-806 4 p.

研究成果: Article

Nanowires
Chemical vapor deposition
nanowires
templates
Organic Chemicals
6 引文 (Scopus)

Characterization of n-gan with naturally textured surface for photoelectrochemical hydrogen generation

Liu, S. Y., Sheu, J. K., Ye, J. C., Tu, S. J., Hsu, C. K., Lee, M. L., Kuo, C. H. & Lai, W. C., 2010 十一月 24, 於 : Journal of the Electrochemical Society. 157, 12, p. H1106-H1109

研究成果: Article

Hydrogen
hydrogen
Ohmic contacts
Epitaxial layers
electric contacts
27 引文 (Scopus)

Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

Yang, C. C., Sheu, J-K., Liang, X. W., Huang, M. S., Lee, M. L., Chang, K. H., Tu, S. J., Huang, F. W. & Lai, W-C., 2010 七月 12, 於 : Applied Physics Letters. 97, 2, 021113.

研究成果: Article

augmentation
electric fields
air masses
volatile organic compounds
barrier layers

Ga-doped ZnO/GaN Schottky barrier UV band-pass photodetector with a low-temperature-grown GaN cap layer

Chang, K. H., Sheu, J-K., Lee, M. L., Kang, K. S., Huang, J. F., Wang, W. L. & Lai, W-C., 2010 四月 1, 於 : Japanese Journal of Applied Physics. 49, 4 PART 2, 04DF12.

研究成果: Article

Photodetectors
caps
photometers
Dark currents
dark current
20 引文 (Scopus)

GaN-based LEDs with AZO:Y upper contact

Chen, P. H., Lai, W-C., Peng, L. C., Kuo, C. H., Yeh, C. L., Sheu, J-K. & Tun, C. J., 2010 一月 1, 於 : IEEE Transactions on Electron Devices. 57, 1, p. 134-139 6 p., 5313952.

研究成果: Article

Diodes
Ytterbium
Annealing
Zinc Oxide
Aluminum Oxide