尋找研究成果

搜尋概念
已選取的篩選器
2010
28 引文 (Scopus)

GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures

Lai, W. C., Yang, Y. Y., Peng, L. C., Yang, S. W., Lin, Y. R. & Sheu, J. K., 2010 八月 23, 於 : Applied Physics Letters. 97, 8, 081103.

研究成果: Article

light emitting diodes
air
output
leakage
light scattering
7 引文 (Scopus)

GaN-based light-emitting diodes with pillar structures around the mesa region

Chen, P. H., Chang, L. C., Tsai, C. H., Lee, Y. C., Lai, W. C., Wu, M. L., Kuo, C. H. & Sheu, J. K., 2010 四月 13, 於 : IEEE Journal of Quantum Electronics. 46, 7, p. 1066-1071 6 p., 5440023.

研究成果: Article

mesas
Light emitting diodes
light emitting diodes
Waveguides
waveguides
1 引文 (Scopus)

GaN schottky barrier photodetectors with a semi-insulating AlInN cap layer

Chang, S-J., Weng, W. Y., Lai, W-C., Hsueh, T. J., Shei, S. C., Zeng, X. F. & Wu, S. L., 2010 三月 26, 於 : Journal of the Electrochemical Society. 157, 4

研究成果: Article

Photodetectors
caps
Leakage currents
photometers
rejection
3 引文 (Scopus)

III-nitride-based light-emitting diodes with GaN micropillars around mesa and patterned substrate

Peng, L. C., Lai, W-C., Chang, M. N., Hsueh, T. H., Shei, S. C. & Sheu, J-K., 2010 一月 1, 於 : IEEE Transactions on Electron Devices. 57, 1, p. 140-144 5 p., 5345812.

研究成果: Article

Nitrides
Light emitting diodes
Substrates
Aluminum Oxide
Sapphire
12 引文 (Scopus)
Ohmic contacts
Electrolytes
Hydrogen
electric contacts
Gases
31 引文 (Scopus)

Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer

Jang, C. H., Sheu, J-K., Tsai, J. T., Chang, S-J., Lai, W-C., Lee, M. L., Ko, T. K., Shen, C. F. & Shei, S. C., 2010 三月 1, 於 : IEEE Journal of Quantum Electronics. 46, 4, p. 513-517 5 p., 5412126.

研究成果: Article

Light emitting diodes
insertion
Electrostatic discharge
light emitting diodes
Durability
6 引文 (Scopus)

InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film

Sheu, J. K., Chang, K. H., Tu, S. J., Lee, M. L., Yang, C. C., Hsu, C. K. & Lai, W. C., 2010 十一月 8, 於 : Optics Express. 18, 104, p. A562-A567

研究成果: Article

flat surfaces
light emitting diodes
masks
templates
augmentation
24 引文 (Scopus)

Inverted Al0.25 Ga0.75 N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Chang, K. H., Sheu, J-K., Lee, M. L., Tu, S. J., Yang, C. C., Kuo, H. S., Yang, J. H. & Lai, W-C., 2010 七月 5, 於 : Applied Physics Letters. 97, 1, 013502.

研究成果: Article

vapor phase epitaxy
photodiodes
templates
aluminum
rejection
11 引文 (Scopus)

Very-high temperature (200°C) and high-speed operation of cascade GaN-based green light- Emitting diodes with an InGaN insertion layer

Shi, J. W., Huang, H. W., Kuo, F. M., Sheu, J. K., Lai, W. C. & Lee, M. L., 2010 七月 1, 於 : IEEE Photonics Technology Letters. 22, 14, p. 1033-1035 3 p., 5460921.

研究成果: Article

Light emitting diodes
insertion
cascades
light emitting diodes
high speed