@article{cfbde8ec4dbd4939b4c61fd85e624c19,
title = "A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film",
abstract = "The authors report the growth of β-Ga2 O3 thin film by simple furnace oxidation of GaN thin film and the fabrication of a solar-blind β-Ga2 O3 photodetector (PD). For the PD with an active area of 4.4 mm2 and 5-V applied bias, it was found that measured current was only 1.39 × 10-10 A in the dark and increased to 2.03 × 10-5 A when illuminated with 260-nm ultraviolet (UV) light (41.27 μW/cm2). It was also found that the fabricated PD exhibits an extremely large deep-UV-to-visible rejection ratio.",
author = "Weng, {W. Y.} and Hsueh, {T. J.} and Chang, {S. J.} and Huang, {G. J.} and Hsueh, {H. T.}",
note = "Funding Information: Manuscript received July 11, 2010; accepted July 21, 2010. Date of publication September 23, 2010; date of current version February 09, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan, by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education, Taiwan, and by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6. The associate editor coordinating the review of this manuscript and approving it for publication was Prof. Evgeny Katz.",
year = "2011",
doi = "10.1109/JSEN.2010.2062176",
language = "English",
volume = "11",
pages = "999--1003",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}