@article{77e51c472a0e4abcb563a30667ea5c12,
title = "A β-Ga2O3/GaN hetero-structured solar-blind and visible-blind dual-band photodetector",
abstract = "The authors report the fabrication of a β-Ga2O 3/GaN solar-blind and visible-blind dual-band photodetector (PD). It was found that we could control the depletion depth of the device and thus switch the operation mode between solar-blind and visible-blind by simply changing the applied bias. It was also found that we could achieve a deep-UV to near-UV contrast ratio of 4.6 × 103 when the device was biased at 1 V. Furthermore, it was found that near-UV to visible contrast ratio of the fabricated β-Ga2O3/GaN PD was 8.5 × 10 2 when biased at 10 V.",
author = "Weng, {W. Y.} and Hsueh, {T. J.} and Chang, {S. J.} and Huang, {G. J.} and Hsueh, {H. T.}",
note = "Funding Information: Manuscript received August 08, 2010; accepted November 14, 2010. Date of publication November 18, 2010; date of current version April 20, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education of Taiwan. This work was also supported by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 98-D0204-6. The associate editor coordinating the review of this paper and approving it for publication was Dr. M. Abedin.",
year = "2011",
doi = "10.1109/JSEN.2010.2093880",
language = "English",
volume = "11",
pages = "1491--1492",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}