The authors report the fabrication of a β-Ga2O 3/GaN solar-blind and visible-blind dual-band photodetector (PD). It was found that we could control the depletion depth of the device and thus switch the operation mode between solar-blind and visible-blind by simply changing the applied bias. It was also found that we could achieve a deep-UV to near-UV contrast ratio of 4.6 × 103 when the device was biased at 1 V. Furthermore, it was found that near-UV to visible contrast ratio of the fabricated β-Ga2O3/GaN PD was 8.5 × 10 2 when biased at 10 V.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering