A β-Ga2O3/GaN hetero-structured solar-blind and visible-blind dual-band photodetector

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

The authors report the fabrication of a β-Ga2O 3/GaN solar-blind and visible-blind dual-band photodetector (PD). It was found that we could control the depletion depth of the device and thus switch the operation mode between solar-blind and visible-blind by simply changing the applied bias. It was also found that we could achieve a deep-UV to near-UV contrast ratio of 4.6 × 103 when the device was biased at 1 V. Furthermore, it was found that near-UV to visible contrast ratio of the fabricated β-Ga2O3/GaN PD was 8.5 × 10 2 when biased at 10 V.

原文English
文章編號5640631
頁(從 - 到)1491-1492
頁數2
期刊IEEE Sensors Journal
11
發行號6
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

指紋 深入研究「A β-Ga<sub>2</sub>O<sub>3</sub>/GaN hetero-structured solar-blind and visible-blind dual-band photodetector」主題。共同形成了獨特的指紋。

引用此