@article{7e9175e9c6de49a7b2091afa0b6c6c4e,
title = "A β-Ga2O3/GaN Schottky-barrier photodetector",
abstract = "The authors report the formation of β-Ga2O3/GaN heterostructure and the fabrication of a β-Ga2O3/GaN bilayer photodetector (PD). It was found that we could control the depletion depth of the device and thus switch the operation mode between solar-blind and visible-blind by simply changing the applied bias. It was also found that we could achieve a deep-ultraviolet (UV) to near-UV contrast ratio of 200 when the device was biased at -1 V. Furthermore, it was found that near-UV to visible contrast ratio of the fabricated β-Ga2O3/GaN PD was 260 when biased at - 10 V.",
author = "Weng, {W. Y.} and Hsueh, {T. J.} and Chang, {S. J.} and Huang, {G. J.} and Hsueh, {H. T.}",
note = "Funding Information: Manuscript received August 12, 2010; revised November 22, 2010; accepted January 15, 2011. Date of publication January 24, 2011; date of current version March 16, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education of Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.",
year = "2011",
doi = "10.1109/LPT.2011.2108276",
language = "English",
volume = "23",
pages = "444--446",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",
}