A 0.18-μm 2.4-6GHz CMOS broadband differential LNA for WLAN and UWB receiver

C. P. Chang, C. C. Yen, H. R. Chuang

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

A 2.4-6 GHz broadband CMOS differential LNA for WLAN and UWB receiver is presented. The LNA is fabricated with the 0.18 μm 1P6M standard CMOS process. Measurement of the chip is performed on a FR-4 PCB test fixture. In the UWB low-band (3 to 5.15GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P 1dB of -17 dBm, respectively. In the band from 2.4 to 3GHz (covering a 802.11b/g band), the LNA exhibit a gain of 17.5-18dB and noise figure less than 3.5dB. From 5.2 to 6GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8V.

原文English
主出版物標題GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
頁面645-648
頁數4
出版狀態Published - 2005 十二月 1
事件GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France
持續時間: 2005 十月 32005 十月 4

出版系列

名字GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
2005

Other

OtherGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
國家France
城市Paris
期間05-10-0305-10-04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • 引用此

    Chang, C. P., Yen, C. C., & Chuang, H. R. (2005). A 0.18-μm 2.4-6GHz CMOS broadband differential LNA for WLAN and UWB receiver. 於 GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium (頁 645-648). (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium; 卷 2005).