A 1-V, 44.6 ppm/C bandgap reference with CDS technique

Peng Yu Chen, Soon-Jyh Chang, Chung-Ming Huang, Chin Fu Lin

研究成果: Conference contribution

摘要

A CMOS bandgap reference generator with switched-capacitor and corresponding double sampling techniques is presented. The proposed circuit uses a low-gain amplifier to generate an accurate reference voltage so that this structure can be implemented in low-voltage environment. With proper design, the circuit can produce any output voltage between supply voltage and ground. The circuit was designed and implemented in 0.18-m CMOS process. The core circuit occupies about 0.065 mm 2 (240 m 271 m). Measurement results show that the temperature coefficient of the output is 47.3 ppm/C in the temperature range from 40 C to 100 C. The average power consumption is about 48.1 W.

原文English
主出版物標題2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers
DOIs
出版狀態Published - 2012 七月 25
事件2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Hsinchu, Taiwan
持續時間: 2012 四月 232012 四月 25

出版系列

名字2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers

Other

Other2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012
國家Taiwan
城市Hsinchu
期間12-04-2312-04-25

指紋

Energy gap
Networks (circuits)
Electric potential
Electric power utilization
Capacitors
Sampling
Temperature

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

引用此文

Chen, P. Y., Chang, S-J., Huang, C-M., & Lin, C. F. (2012). A 1-V, 44.6 ppm/C bandgap reference with CDS technique. 於 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers [6212660] (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers). https://doi.org/10.1109/VLSI-DAT.2012.6212660
Chen, Peng Yu ; Chang, Soon-Jyh ; Huang, Chung-Ming ; Lin, Chin Fu. / A 1-V, 44.6 ppm/C bandgap reference with CDS technique. 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers. 2012. (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers).
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abstract = "A CMOS bandgap reference generator with switched-capacitor and corresponding double sampling techniques is presented. The proposed circuit uses a low-gain amplifier to generate an accurate reference voltage so that this structure can be implemented in low-voltage environment. With proper design, the circuit can produce any output voltage between supply voltage and ground. The circuit was designed and implemented in 0.18-m CMOS process. The core circuit occupies about 0.065 mm 2 (240 m 271 m). Measurement results show that the temperature coefficient of the output is 47.3 ppm/C in the temperature range from 40 C to 100 C. The average power consumption is about 48.1 W.",
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Chen, PY, Chang, S-J, Huang, C-M & Lin, CF 2012, A 1-V, 44.6 ppm/C bandgap reference with CDS technique. 於 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers., 6212660, 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers, 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012, Hsinchu, Taiwan, 12-04-23. https://doi.org/10.1109/VLSI-DAT.2012.6212660

A 1-V, 44.6 ppm/C bandgap reference with CDS technique. / Chen, Peng Yu; Chang, Soon-Jyh; Huang, Chung-Ming; Lin, Chin Fu.

2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers. 2012. 6212660 (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers).

研究成果: Conference contribution

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Chen PY, Chang S-J, Huang C-M, Lin CF. A 1-V, 44.6 ppm/C bandgap reference with CDS technique. 於 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers. 2012. 6212660. (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers). https://doi.org/10.1109/VLSI-DAT.2012.6212660