A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing

Shaun Chou, Gu Huan Li, Shawn Chen, Jun Hao Chang, Wan Hsueh Cheng, Shao Ding Wu, Philex Fan, Chia En Huang, Yu Der Chih, Yih Wang, Jonathan Chang

研究成果: Conference contribution

摘要

A 16Kb one-time-programmable (OTP) antifuse memory is fabricated in a 5nm high-K, metal-gate FinFET CMOS for the first time. The bootstrap high voltage scheme (BHVS), read endpoint detection (REPD) and pseudo-differential sensing (PDS) are implemented to achieve intrinsic bit error rate (BER) below 1ppb for in-field programming in 5nm SoC and 10 years of data retention at 125°C.

原文English
主出版物標題2021 Symposium on VLSI Circuits, VLSI Circuits 2021
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9784863487796
DOIs
出版狀態Published - 2021 6月 13
事件35th Symposium on VLSI Circuits, VLSI Circuits 2021 - Virutal, Online
持續時間: 2021 6月 132021 6月 19

出版系列

名字IEEE Symposium on VLSI Circuits, Digest of Technical Papers
2021-June

Conference

Conference35th Symposium on VLSI Circuits, VLSI Circuits 2021
城市Virutal, Online
期間21-06-1321-06-19

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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