A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing

Shaun Chou, Gu Huan Li, Shawn Chen, Jun Hao Chang, Wan Hsueh Cheng, Shao Ding Wu, Philex Fan, Chia En Huang, Yu Der Chih, Yih Wang, Jonathan Chang

研究成果: Conference contribution

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Engineering & Materials Science

Chemical Compounds