A 177mW 10GS/s NRZ DAC with Switching-Glitch Compensation Achieving > 64dBc SFDR and < -77dBc IM3

Hung Yi Huang, Xin Yu Chen, Tai Haur Kuo

研究成果: Conference contribution

摘要

This work presents a 14-bit 10GS/s NRZ DAC in 28nm CMOS. Using the proposed switching-glitch compensation to reduce both the switching-glitch effect and code-dependent supply bouncing, this work achieves > 64dBc SFDR and < -77 dBc IM3 over the entire Nyquist band at 10GS/s. Compared with other state-of-the-art CMOS Nyquist NRZ DACs with resolution ≥ 10bits and fs ≥ 6GHz, this work has the smallest area of 0.1mm2, the lowest power consumption of 177mW, and the best FoM performance.

原文English
主出版物標題2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728199429
DOIs
出版狀態Published - 2020 六月
事件2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Honolulu, United States
持續時間: 2020 六月 162020 六月 19

出版系列

名字IEEE Symposium on VLSI Circuits, Digest of Technical Papers
2020-June

Conference

Conference2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020
國家United States
城市Honolulu
期間20-06-1620-06-19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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