A 2.4 GHz CMOS power amplifier with 20 dBm output power for bluetooth and WLAN applications

Cheng Chi Yen, Huey-Ru Chuang

研究成果: Article

摘要

This article presents a 2.4 GHz CMOS power amplifier (PA) with an output power of 20 dBm using a 0.25 μm 1P5M standard CMOS process. The PA uses a diode connected NMOS transistor functioning as a diode linearizer. It is believed that this is the first use of a diode linearization technique in a CMOS PA design. It shows an effective improvement in linearity from gain compression and adjacent channel power ratio (ACPR) measured results. The measurements are performed using an FR-4 PCB test fixture. The fabricated power amplifier exhibits an output power of 20 dBm and a power-added efficiency as high as 28 percent. The PA performance demonstrates the standard CMOS process potential for medium power RF amplification for 2.4 GHz wireless communications applications, such as Bluetooth and WLAN 802.11b.

原文English
46
1
專業出版物Microwave Journal
出版狀態Published - 2003 一月 1

指紋

Bluetooth
Wireless local area networks (WLAN)
Power amplifiers
Diodes
Polychlorinated biphenyls
Linearization
Amplification
Transistors
Communication

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

@misc{04cfb965c3d84db8a1057ae01443ffe7,
title = "A 2.4 GHz CMOS power amplifier with 20 dBm output power for bluetooth and WLAN applications",
abstract = "This article presents a 2.4 GHz CMOS power amplifier (PA) with an output power of 20 dBm using a 0.25 μm 1P5M standard CMOS process. The PA uses a diode connected NMOS transistor functioning as a diode linearizer. It is believed that this is the first use of a diode linearization technique in a CMOS PA design. It shows an effective improvement in linearity from gain compression and adjacent channel power ratio (ACPR) measured results. The measurements are performed using an FR-4 PCB test fixture. The fabricated power amplifier exhibits an output power of 20 dBm and a power-added efficiency as high as 28 percent. The PA performance demonstrates the standard CMOS process potential for medium power RF amplification for 2.4 GHz wireless communications applications, such as Bluetooth and WLAN 802.11b.",
author = "Yen, {Cheng Chi} and Huey-Ru Chuang",
year = "2003",
month = "1",
day = "1",
language = "English",
volume = "46",
journal = "Microwave Journal",
issn = "0192-6225",
publisher = "Horizon House",

}

TY - GEN

T1 - A 2.4 GHz CMOS power amplifier with 20 dBm output power for bluetooth and WLAN applications

AU - Yen, Cheng Chi

AU - Chuang, Huey-Ru

PY - 2003/1/1

Y1 - 2003/1/1

N2 - This article presents a 2.4 GHz CMOS power amplifier (PA) with an output power of 20 dBm using a 0.25 μm 1P5M standard CMOS process. The PA uses a diode connected NMOS transistor functioning as a diode linearizer. It is believed that this is the first use of a diode linearization technique in a CMOS PA design. It shows an effective improvement in linearity from gain compression and adjacent channel power ratio (ACPR) measured results. The measurements are performed using an FR-4 PCB test fixture. The fabricated power amplifier exhibits an output power of 20 dBm and a power-added efficiency as high as 28 percent. The PA performance demonstrates the standard CMOS process potential for medium power RF amplification for 2.4 GHz wireless communications applications, such as Bluetooth and WLAN 802.11b.

AB - This article presents a 2.4 GHz CMOS power amplifier (PA) with an output power of 20 dBm using a 0.25 μm 1P5M standard CMOS process. The PA uses a diode connected NMOS transistor functioning as a diode linearizer. It is believed that this is the first use of a diode linearization technique in a CMOS PA design. It shows an effective improvement in linearity from gain compression and adjacent channel power ratio (ACPR) measured results. The measurements are performed using an FR-4 PCB test fixture. The fabricated power amplifier exhibits an output power of 20 dBm and a power-added efficiency as high as 28 percent. The PA performance demonstrates the standard CMOS process potential for medium power RF amplification for 2.4 GHz wireless communications applications, such as Bluetooth and WLAN 802.11b.

UR - http://www.scopus.com/inward/record.url?scp=0037265912&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037265912&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037265912

VL - 46

JO - Microwave Journal

JF - Microwave Journal

SN - 0192-6225

ER -