This article presented a highly linear image-rejection (IR) low-noise amplifier (LNA) for 2.4 GHz band applications based on 0.18 μm CMOS technology. By using folded PMOS for sinking the third-order intermodulation distortion (IMD3), the IR LNA has high input third-order intercept point (IIP3) at 2.4 GHz. The IR filter, using a high quality factor (Q) active inductor, has 30 dB rejection for 1.6 GHz image band with intermediate frequency of 400 MHz. An IIP3 of + 10 dBm was obtained with a gain of 16.8 dB, noise figure (NF) of 2.5 dB, and power consumption of 12 mW.
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