A 2.4 GHz highly linear image-rejection low noise amplifier by using an active inductor

Jain Yi Li; Chin Sheng Chang; Wen Jeng Lin; Han Jan Chen; Lih Shan Chen; Mau Phon Houng

doi:10.1002/mop.24381

A 2.4 GHz highly linear image-rejection low noise amplifier by using an active inductor

Jain Yi Li
, Chin Sheng Chang
, Wen Jeng Lin
, Han Jan Chen
, Lih Shan Chen
, Mau Phon Houng

電機工程學系

研究成果: Article › 同行評審

摘要

This article presented a highly linear image-rejection (IR) low-noise amplifier (LNA) for 2.4 GHz band applications based on 0.18 μm CMOS technology. By using folded PMOS for sinking the third-order intermodulation distortion (IMD3), the IR LNA has high input third-order intercept point (IIP3) at 2.4 GHz. The IR filter, using a high quality factor (Q) active inductor, has 30 dB rejection for 1.6 GHz image band with intermediate frequency of 400 MHz. An IIP3 of + 10 dBm was obtained with a gain of 16.8 dB, noise figure (NF) of 2.5 dB, and power consumption of 12 mW.

原文	English
頁（從 - 到）	1570-1573
頁數	4
期刊	Microwave and Optical Technology Letters
卷	51
發行號	6
DOIs	https://doi.org/10.1002/mop.24381
出版狀態	Published - 2009 6月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
電氣與電子工程

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10.1002/mop.24381

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title = "A 2.4 GHz highly linear image-rejection low noise amplifier by using an active inductor",

abstract = "This article presented a highly linear image-rejection (IR) low-noise amplifier (LNA) for 2.4 GHz band applications based on 0.18 μm CMOS technology. By using folded PMOS for sinking the third-order intermodulation distortion (IMD3), the IR LNA has high input third-order intercept point (IIP3) at 2.4 GHz. The IR filter, using a high quality factor (Q) active inductor, has 30 dB rejection for 1.6 GHz image band with intermediate frequency of 400 MHz. An IIP3 of + 10 dBm was obtained with a gain of 16.8 dB, noise figure (NF) of 2.5 dB, and power consumption of 12 mW.",

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year = "2009",

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doi = "10.1002/mop.24381",

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AU - Li, Jain Yi

AU - Chang, Chin Sheng

AU - Lin, Wen Jeng

AU - Chen, Han Jan

AU - Chen, Lih Shan

AU - Houng, Mau Phon

PY - 2009/6

Y1 - 2009/6

N2 - This article presented a highly linear image-rejection (IR) low-noise amplifier (LNA) for 2.4 GHz band applications based on 0.18 μm CMOS technology. By using folded PMOS for sinking the third-order intermodulation distortion (IMD3), the IR LNA has high input third-order intercept point (IIP3) at 2.4 GHz. The IR filter, using a high quality factor (Q) active inductor, has 30 dB rejection for 1.6 GHz image band with intermediate frequency of 400 MHz. An IIP3 of + 10 dBm was obtained with a gain of 16.8 dB, noise figure (NF) of 2.5 dB, and power consumption of 12 mW.

AB - This article presented a highly linear image-rejection (IR) low-noise amplifier (LNA) for 2.4 GHz band applications based on 0.18 μm CMOS technology. By using folded PMOS for sinking the third-order intermodulation distortion (IMD3), the IR LNA has high input third-order intercept point (IIP3) at 2.4 GHz. The IR filter, using a high quality factor (Q) active inductor, has 30 dB rejection for 1.6 GHz image band with intermediate frequency of 400 MHz. An IIP3 of + 10 dBm was obtained with a gain of 16.8 dB, noise figure (NF) of 2.5 dB, and power consumption of 12 mW.

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 6

ER -

A 2.4 GHz highly linear image-rejection low noise amplifier by using an active inductor

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