A 2.5 V switched-current sigma-delta modulator with a novel class AB memory cell

Shuenn-Yuh Lee, Yueh L. Tsai, Wei Z. Su, Po H. Yang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

This paper is an aim on the representation of a second-order Sigma-Delta Modulator (SDM) with a novel switched-current class AB memory cell. The Benefits of the proposed memory cell such as high input dynamic range, high linearity, signal-independent settling behavior, and low power consumption, are importantly introduced. The SDM is simulated with TSMC 0.35 μm 1P4M standard CMOS process technology, therefore the simulation results reveal that the SDM has maximum signal-to-noise, distortion ratio of 69 dB, power consumption of 0.52 mW, and dynamic range of 75 dB from a single 2.5 V power supply.

原文English
期刊Proceedings - IEEE International Symposium on Circuits and Systems
1
出版狀態Published - 2003

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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