A 2.5 V switched-current sigma-delta modulator with a novel class AB memory cell

Shuenn-Yuh Lee, Yueh L. Tsai, Wei Z. Su, Po H. Yang

研究成果: Article

6 引文 (Scopus)

摘要

This paper is an aim on the representation of a second-order Sigma-Delta Modulator (SDM) with a novel switched-current class AB memory cell. The Benefits of the proposed memory cell such as high input dynamic range, high linearity, signal-independent settling behavior, and low power consumption, are importantly introduced. The SDM is simulated with TSMC 0.35 μm 1P4M standard CMOS process technology, therefore the simulation results reveal that the SDM has maximum signal-to-noise, distortion ratio of 69 dB, power consumption of 0.52 mW, and dynamic range of 75 dB from a single 2.5 V power supply.

原文English
期刊Proceedings - IEEE International Symposium on Circuits and Systems
1
出版狀態Published - 2003

指紋

Modulators
Data storage equipment
Electric power utilization

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

引用此文

@article{b4059abd70db4460bec04c93599bcdf4,
title = "A 2.5 V switched-current sigma-delta modulator with a novel class AB memory cell",
abstract = "This paper is an aim on the representation of a second-order Sigma-Delta Modulator (SDM) with a novel switched-current class AB memory cell. The Benefits of the proposed memory cell such as high input dynamic range, high linearity, signal-independent settling behavior, and low power consumption, are importantly introduced. The SDM is simulated with TSMC 0.35 μm 1P4M standard CMOS process technology, therefore the simulation results reveal that the SDM has maximum signal-to-noise, distortion ratio of 69 dB, power consumption of 0.52 mW, and dynamic range of 75 dB from a single 2.5 V power supply.",
author = "Shuenn-Yuh Lee and Tsai, {Yueh L.} and Su, {Wei Z.} and Yang, {Po H.}",
year = "2003",
language = "English",
volume = "1",
journal = "Proceedings - IEEE International Symposium on Circuits and Systems",
issn = "0271-4310",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - A 2.5 V switched-current sigma-delta modulator with a novel class AB memory cell

AU - Lee, Shuenn-Yuh

AU - Tsai, Yueh L.

AU - Su, Wei Z.

AU - Yang, Po H.

PY - 2003

Y1 - 2003

N2 - This paper is an aim on the representation of a second-order Sigma-Delta Modulator (SDM) with a novel switched-current class AB memory cell. The Benefits of the proposed memory cell such as high input dynamic range, high linearity, signal-independent settling behavior, and low power consumption, are importantly introduced. The SDM is simulated with TSMC 0.35 μm 1P4M standard CMOS process technology, therefore the simulation results reveal that the SDM has maximum signal-to-noise, distortion ratio of 69 dB, power consumption of 0.52 mW, and dynamic range of 75 dB from a single 2.5 V power supply.

AB - This paper is an aim on the representation of a second-order Sigma-Delta Modulator (SDM) with a novel switched-current class AB memory cell. The Benefits of the proposed memory cell such as high input dynamic range, high linearity, signal-independent settling behavior, and low power consumption, are importantly introduced. The SDM is simulated with TSMC 0.35 μm 1P4M standard CMOS process technology, therefore the simulation results reveal that the SDM has maximum signal-to-noise, distortion ratio of 69 dB, power consumption of 0.52 mW, and dynamic range of 75 dB from a single 2.5 V power supply.

UR - http://www.scopus.com/inward/record.url?scp=0038150611&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038150611&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0038150611

VL - 1

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

SN - 0271-4310

ER -