A 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire for use in bioelectronic probing

Min Cheng Chen, Chang Hsien Lin, Chia Yi Lin, Hsiao-Chien Chen, Ta Hsien Lee, Mu Yi Hua, Jian Tai Qiu, Chiahua Ho, Fu Liang Yang

研究成果: Article

摘要

Using a self-aligned sidewall microcrystalline-silicon (μ-Si) dual channel, comprising a sub-50-nm channel width, a novel 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire device was fabricated on top metal using a tungsten gate-stack and trilayered oxide/nitride/oxide gate dielectric. The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that μ-Si surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications.

原文English
文章編號6740855
頁(從 - 到)897-901
頁數5
期刊IEEE Transactions on Electron Devices
61
發行號3
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • 引用此

    Chen, M. C., Lin, C. H., Lin, C. Y., Chen, H-C., Lee, T. H., Hua, M. Y., Qiu, J. T., Ho, C., & Yang, F. L. (2014). A 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire for use in bioelectronic probing. IEEE Transactions on Electron Devices, 61(3), 897-901. [6740855]. https://doi.org/10.1109/TED.2014.2298462