A 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire for use in bioelectronic probing

Min Cheng Chen, Chang Hsien Lin, Chia Yi Lin, Hsiao-Chien Chen, Ta Hsien Lee, Mu Yi Hua, Jian Tai Qiu, Chiahua Ho, Fu Liang Yang

研究成果: Article同行評審

摘要

Using a self-aligned sidewall microcrystalline-silicon (μ-Si) dual channel, comprising a sub-50-nm channel width, a novel 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire device was fabricated on top metal using a tungsten gate-stack and trilayered oxide/nitride/oxide gate dielectric. The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that μ-Si surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications.

原文English
文章編號6740855
頁(從 - 到)897-901
頁數5
期刊IEEE Transactions on Electron Devices
61
發行號3
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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