A 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire for use in bioelectronic probing

Min Cheng Chen, Chang Hsien Lin, Chia Yi Lin, Hsiao Chain Chen, Ta Hsien Lee, Mu Yi Hua, Jian Tai Qiu, Chiahua Ho, Fu Liang Yang

研究成果: Article同行評審

摘要

Using a self-aligned sidewall microcrystalline-silicon (μ-Si) dual channel, comprising a sub-50-nm channel width, a novel 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire device was fabricated on top metal using a tungsten gate-stack and trilayered oxide/nitride/oxide gate dielectric. The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that μ-Si surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications.

原文English
文章編號6740855
頁(從 - 到)897-901
頁數5
期刊IEEE Transactions on Electron Devices
61
發行號3
DOIs
出版狀態Published - 2014 3月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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