A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology

Kin Tak Lam; Yi Hao Chen; Ting Jen Hsueh; Shoou Jinn Chang

doi:10.1109/TED.2016.2585762

A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology

Kin Tak Lam, Yi Hao Chen, Ting Jen Hsueh, Shoou Jinn Chang

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

The authors report the fabrication of a 3-D ZnO-nanowire/MOSFET smart photo sensor using through silicon via technology. It was found that the MOSFET, prepared by hot-wire chemical vapor deposition, exhibits standard saturation and pinch-off characteristics. The dynamic response of the 3-D ZnO-nanowire/MOSFET smart photo sensor was stable and reproducible with an ON-OFF current contrast ratio larger than one order of magnitude. As we turned OFF the ultraviolet illumination, it was found that the decay time was smaller than 1 s for the 3-D ZnO-nanowire/MOSFET smart photo sensor, which was significantly shorter than that observed from the conventional ZnO nanowire photo sensor.

原文	English
文章編號	7509662
頁（從 - 到）	3562-3566
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	63
發行號	9
DOIs	https://doi.org/10.1109/TED.2016.2585762
出版狀態	Published - 2016 9月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/TED.2016.2585762

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@article{aac6214f562d47a09761bfd068cddee3,

title = "A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology",

abstract = "The authors report the fabrication of a 3-D ZnO-nanowire/MOSFET smart photo sensor using through silicon via technology. It was found that the MOSFET, prepared by hot-wire chemical vapor deposition, exhibits standard saturation and pinch-off characteristics. The dynamic response of the 3-D ZnO-nanowire/MOSFET smart photo sensor was stable and reproducible with an ON-OFF current contrast ratio larger than one order of magnitude. As we turned OFF the ultraviolet illumination, it was found that the decay time was smaller than 1 s for the 3-D ZnO-nanowire/MOSFET smart photo sensor, which was significantly shorter than that observed from the conventional ZnO nanowire photo sensor.",

author = "Lam, {Kin Tak} and Chen, {Yi Hao} and Hsueh, {Ting Jen} and Chang, {Shoou Jinn}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = sep,

doi = "10.1109/TED.2016.2585762",

language = "English",

volume = "63",

pages = "3562--3566",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology

AU - Lam, Kin Tak

AU - Chen, Yi Hao

AU - Hsueh, Ting Jen

AU - Chang, Shoou Jinn

PY - 2016/9

Y1 - 2016/9

N2 - The authors report the fabrication of a 3-D ZnO-nanowire/MOSFET smart photo sensor using through silicon via technology. It was found that the MOSFET, prepared by hot-wire chemical vapor deposition, exhibits standard saturation and pinch-off characteristics. The dynamic response of the 3-D ZnO-nanowire/MOSFET smart photo sensor was stable and reproducible with an ON-OFF current contrast ratio larger than one order of magnitude. As we turned OFF the ultraviolet illumination, it was found that the decay time was smaller than 1 s for the 3-D ZnO-nanowire/MOSFET smart photo sensor, which was significantly shorter than that observed from the conventional ZnO nanowire photo sensor.

AB - The authors report the fabrication of a 3-D ZnO-nanowire/MOSFET smart photo sensor using through silicon via technology. It was found that the MOSFET, prepared by hot-wire chemical vapor deposition, exhibits standard saturation and pinch-off characteristics. The dynamic response of the 3-D ZnO-nanowire/MOSFET smart photo sensor was stable and reproducible with an ON-OFF current contrast ratio larger than one order of magnitude. As we turned OFF the ultraviolet illumination, it was found that the decay time was smaller than 1 s for the 3-D ZnO-nanowire/MOSFET smart photo sensor, which was significantly shorter than that observed from the conventional ZnO nanowire photo sensor.

UR - http://www.scopus.com/inward/record.url?scp=84978224404&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978224404&partnerID=8YFLogxK

U2 - 10.1109/TED.2016.2585762

DO - 10.1109/TED.2016.2585762

M3 - Article

AN - SCOPUS:84978224404

SN - 0018-9383

VL - 63

SP - 3562

EP - 3566

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

M1 - 7509662

ER -

A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology

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