A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology

Kin Tak Lam, Yi Hao Chen, Ting Jen Hsueh, Shoou Jinn Chang

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

The authors report the fabrication of a 3-D ZnO-nanowire/MOSFET smart photo sensor using through silicon via technology. It was found that the MOSFET, prepared by hot-wire chemical vapor deposition, exhibits standard saturation and pinch-off characteristics. The dynamic response of the 3-D ZnO-nanowire/MOSFET smart photo sensor was stable and reproducible with an ON-OFF current contrast ratio larger than one order of magnitude. As we turned OFF the ultraviolet illumination, it was found that the decay time was smaller than 1 s for the 3-D ZnO-nanowire/MOSFET smart photo sensor, which was significantly shorter than that observed from the conventional ZnO nanowire photo sensor.

原文English
文章編號7509662
頁(從 - 到)3562-3566
頁數5
期刊IEEE Transactions on Electron Devices
63
發行號9
DOIs
出版狀態Published - 2016 九月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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