A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit

Lih Yih Chiou, Chi Ray Huang, Chang Chieh Cheng, Yu Lin Tsai

研究成果: Paper

4 引文 (Scopus)

摘要

Lowering supply voltage from super-threshold to sub-threshold is a promising approach for ultra-low energy applications. However, the degraded cell stability limits the voltage scalability of the conventional 6T SRAM. In this paper, we proposed a novel local assist circuitry that enables low energy and variability resilient operation at ultra-low voltages for differential sub-threshold SRAM design. The process variation tolerant local sense amplifier and charge-sharing based precharge scheme are utilized to ensure the read stability at ultra-low voltage region. A 16kb 6T SRAM marco is implemented in 90nm CMOS technology to demonstrate the functionality of our proposed local assist circuits. Its minimum energy consumption is 0.624pJ/access, operating at 26.3MHz and 400mV.

原文English
頁面337-340
頁數4
DOIs
出版狀態Published - 2013 五月 27
事件2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
持續時間: 2013 二月 252013 二月 26

Other

Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
國家Taiwan
城市Kaohsiung
期間13-02-2513-02-26

指紋

Static random access storage
Networks (circuits)
Electric potential
Scalability
Energy utilization

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Chiou, L. Y., Huang, C. R., Cheng, C. C., & Tsai, Y. L. (2013). A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit. 337-340. 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512360
Chiou, Lih Yih ; Huang, Chi Ray ; Cheng, Chang Chieh ; Tsai, Yu Lin. / A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit. 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.4 p.
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Chiou, LY, Huang, CR, Cheng, CC & Tsai, YL 2013, 'A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit' 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, 13-02-25 - 13-02-26, 頁 337-340. https://doi.org/10.1109/ISNE.2013.6512360

A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit. / Chiou, Lih Yih; Huang, Chi Ray; Cheng, Chang Chieh; Tsai, Yu Lin.

2013. 337-340 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.

研究成果: Paper

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AB - Lowering supply voltage from super-threshold to sub-threshold is a promising approach for ultra-low energy applications. However, the degraded cell stability limits the voltage scalability of the conventional 6T SRAM. In this paper, we proposed a novel local assist circuitry that enables low energy and variability resilient operation at ultra-low voltages for differential sub-threshold SRAM design. The process variation tolerant local sense amplifier and charge-sharing based precharge scheme are utilized to ensure the read stability at ultra-low voltage region. A 16kb 6T SRAM marco is implemented in 90nm CMOS technology to demonstrate the functionality of our proposed local assist circuits. Its minimum energy consumption is 0.624pJ/access, operating at 26.3MHz and 400mV.

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Chiou LY, Huang CR, Cheng CC, Tsai YL. A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit. 2013. 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512360