摘要
Lowering supply voltage from super-threshold to sub-threshold is a promising approach for ultra-low energy applications. However, the degraded cell stability limits the voltage scalability of the conventional 6T SRAM. In this paper, we proposed a novel local assist circuitry that enables low energy and variability resilient operation at ultra-low voltages for differential sub-threshold SRAM design. The process variation tolerant local sense amplifier and charge-sharing based precharge scheme are utilized to ensure the read stability at ultra-low voltage region. A 16kb 6T SRAM marco is implemented in 90nm CMOS technology to demonstrate the functionality of our proposed local assist circuits. Its minimum energy consumption is 0.624pJ/access, operating at 26.3MHz and 400mV.
| 原文 | English |
|---|---|
| 頁面 | 337-340 |
| 頁數 | 4 |
| DOIs | |
| 出版狀態 | Published - 2013 五月 27 |
| 事件 | 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan 持續時間: 2013 二月 25 → 2013 二月 26 |
Other
| Other | 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 |
|---|---|
| 國家 | Taiwan |
| 城市 | Kaohsiung |
| 期間 | 13-02-25 → 13-02-26 |
指紋
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
引用此文
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A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit. / Chiou, Lih Yih; Huang, Chi Ray; Cheng, Chang Chieh; Tsai, Yu Lin.
2013. 337-340 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.研究成果: Paper
TY - CONF
T1 - A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit
AU - Chiou, Lih Yih
AU - Huang, Chi Ray
AU - Cheng, Chang Chieh
AU - Tsai, Yu Lin
PY - 2013/5/27
Y1 - 2013/5/27
N2 - Lowering supply voltage from super-threshold to sub-threshold is a promising approach for ultra-low energy applications. However, the degraded cell stability limits the voltage scalability of the conventional 6T SRAM. In this paper, we proposed a novel local assist circuitry that enables low energy and variability resilient operation at ultra-low voltages for differential sub-threshold SRAM design. The process variation tolerant local sense amplifier and charge-sharing based precharge scheme are utilized to ensure the read stability at ultra-low voltage region. A 16kb 6T SRAM marco is implemented in 90nm CMOS technology to demonstrate the functionality of our proposed local assist circuits. Its minimum energy consumption is 0.624pJ/access, operating at 26.3MHz and 400mV.
AB - Lowering supply voltage from super-threshold to sub-threshold is a promising approach for ultra-low energy applications. However, the degraded cell stability limits the voltage scalability of the conventional 6T SRAM. In this paper, we proposed a novel local assist circuitry that enables low energy and variability resilient operation at ultra-low voltages for differential sub-threshold SRAM design. The process variation tolerant local sense amplifier and charge-sharing based precharge scheme are utilized to ensure the read stability at ultra-low voltage region. A 16kb 6T SRAM marco is implemented in 90nm CMOS technology to demonstrate the functionality of our proposed local assist circuits. Its minimum energy consumption is 0.624pJ/access, operating at 26.3MHz and 400mV.
UR - http://www.scopus.com/inward/record.url?scp=84877962483&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84877962483&partnerID=8YFLogxK
U2 - 10.1109/ISNE.2013.6512360
DO - 10.1109/ISNE.2013.6512360
M3 - Paper
AN - SCOPUS:84877962483
SP - 337
EP - 340
ER -