摘要
This paper presents a much simpler single polysilicon bipolar technology, which can provide low cost, high performance transistor featuring 30GHz fT. Added to this process are polysilicon resistors, high Q inductors and metal-insulator-metal (MIM) capacitors. These data clearly demonstrated that these passive components could be successfully integrated into an existing bipolar process for use in wireless communication applications. These features provide a higher level of system integration in RF circuits.
原文 | English |
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頁面 | 179-182 |
頁數 | 4 |
出版狀態 | Published - 1999 |
事件 | 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore 持續時間: 1999 9月 8 → 1999 9月 10 |
Other
Other | 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 |
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國家/地區 | Singapore |
城市 | Singapore |
期間 | 99-09-08 → 99-09-10 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 電氣與電子工程