This paper presents a much simpler single polysilicon bipolar technology, which can provide low cost, high performance transistor featuring 30GHz fT. Added to this process are polysilicon resistors, high Q inductors and metal-insulator-metal (MIM) capacitors. These data clearly demonstrated that these passive components could be successfully integrated into an existing bipolar process for use in wireless communication applications. These features provide a higher level of system integration in RF circuits.
|出版狀態||Published - 1999|
|事件||8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore|
持續時間: 1999 九月 8 → 1999 九月 10
|Other||8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99|
|期間||99-09-08 → 99-09-10|
All Science Journal Classification (ASJC) codes