A 30GHz bipolar production technology with high quality passive components

Chwan Ying Lee, Kuan Lun Chang, Tsyr Shyang Liou, Tzuen His Huang, Shin Chi Lu, Denny Tang

研究成果: Paper

摘要

This paper presents a much simpler single polysilicon bipolar technology, which can provide low cost, high performance transistor featuring 30GHz fT. Added to this process are polysilicon resistors, high Q inductors and metal-insulator-metal (MIM) capacitors. These data clearly demonstrated that these passive components could be successfully integrated into an existing bipolar process for use in wireless communication applications. These features provide a higher level of system integration in RF circuits.

原文English
頁面179-182
頁數4
出版狀態Published - 1999 十二月 1
事件8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore
持續時間: 1999 九月 81999 九月 10

Other

Other8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99
國家Singapore
城市Singapore
期間99-09-0899-09-10

指紋

Polysilicon
Metals
Resistors
Transistors
Capacitors
Networks (circuits)
Communication
Costs

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Lee, C. Y., Chang, K. L., Liou, T. S., Huang, T. H., Lu, S. C., & Tang, D. (1999). A 30GHz bipolar production technology with high quality passive components. 179-182. 論文發表於 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99, Singapore, Singapore.
Lee, Chwan Ying ; Chang, Kuan Lun ; Liou, Tsyr Shyang ; Huang, Tzuen His ; Lu, Shin Chi ; Tang, Denny. / A 30GHz bipolar production technology with high quality passive components. 論文發表於 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99, Singapore, Singapore.4 p.
@conference{fbaf33679e96481da4b39cb825256a0e,
title = "A 30GHz bipolar production technology with high quality passive components",
abstract = "This paper presents a much simpler single polysilicon bipolar technology, which can provide low cost, high performance transistor featuring 30GHz fT. Added to this process are polysilicon resistors, high Q inductors and metal-insulator-metal (MIM) capacitors. These data clearly demonstrated that these passive components could be successfully integrated into an existing bipolar process for use in wireless communication applications. These features provide a higher level of system integration in RF circuits.",
author = "Lee, {Chwan Ying} and Chang, {Kuan Lun} and Liou, {Tsyr Shyang} and Huang, {Tzuen His} and Lu, {Shin Chi} and Denny Tang",
year = "1999",
month = "12",
day = "1",
language = "English",
pages = "179--182",
note = "8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 ; Conference date: 08-09-1999 Through 10-09-1999",

}

Lee, CY, Chang, KL, Liou, TS, Huang, TH, Lu, SC & Tang, D 1999, 'A 30GHz bipolar production technology with high quality passive components', 論文發表於 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99, Singapore, Singapore, 99-09-08 - 99-09-10 頁 179-182.

A 30GHz bipolar production technology with high quality passive components. / Lee, Chwan Ying; Chang, Kuan Lun; Liou, Tsyr Shyang; Huang, Tzuen His; Lu, Shin Chi; Tang, Denny.

1999. 179-182 論文發表於 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99, Singapore, Singapore.

研究成果: Paper

TY - CONF

T1 - A 30GHz bipolar production technology with high quality passive components

AU - Lee, Chwan Ying

AU - Chang, Kuan Lun

AU - Liou, Tsyr Shyang

AU - Huang, Tzuen His

AU - Lu, Shin Chi

AU - Tang, Denny

PY - 1999/12/1

Y1 - 1999/12/1

N2 - This paper presents a much simpler single polysilicon bipolar technology, which can provide low cost, high performance transistor featuring 30GHz fT. Added to this process are polysilicon resistors, high Q inductors and metal-insulator-metal (MIM) capacitors. These data clearly demonstrated that these passive components could be successfully integrated into an existing bipolar process for use in wireless communication applications. These features provide a higher level of system integration in RF circuits.

AB - This paper presents a much simpler single polysilicon bipolar technology, which can provide low cost, high performance transistor featuring 30GHz fT. Added to this process are polysilicon resistors, high Q inductors and metal-insulator-metal (MIM) capacitors. These data clearly demonstrated that these passive components could be successfully integrated into an existing bipolar process for use in wireless communication applications. These features provide a higher level of system integration in RF circuits.

UR - http://www.scopus.com/inward/record.url?scp=1842778984&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842778984&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1842778984

SP - 179

EP - 182

ER -

Lee CY, Chang KL, Liou TS, Huang TH, Lu SC, Tang D. A 30GHz bipolar production technology with high quality passive components. 1999. 論文發表於 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99, Singapore, Singapore.