A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

Hong Zhi Liu; Hou Kuei Huang; Ray Jay Chiu; Chen Kuo Chu; Che Hung Lin; Chih Cheng Wang; Yeong-Her Wang; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang

doi:10.1002/mop.20620

A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

Hong Zhi Liu, Hou Kuei Huang, Ray Jay Chiu, Chen Kuo Chu, Che Hung Lin, Chih Cheng Wang, Yeong-Her Wang, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang

研究成果: Article › 同行評審

摘要

A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 ^rd-order intercept point is also measured.

原文	English
頁（從 - 到）	311-313
頁數	3
期刊	Microwave and Optical Technology Letters
卷	44
發行號	4
DOIs	https://doi.org/10.1002/mop.20620
出版狀態	Published - 2005 二月 20

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
電氣與電子工程

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10.1002/mop.20620

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@article{1de00e11a4144ed4a51f0afa4db37905,

title = "A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications",

abstract = "A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.",

author = "Liu, {Hong Zhi} and Huang, {Hou Kuei} and Chiu, {Ray Jay} and Chu, {Chen Kuo} and Lin, {Che Hung} and Wang, {Chih Cheng} and Yeong-Her Wang and Chang, {Ching Hsueh} and Wu, {Chang Luen} and Chang, {Chian Sern}",

year = "2005",

month = feb,

day = "20",

doi = "10.1002/mop.20620",

language = "English",

volume = "44",

pages = "311--313",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley and Sons Inc.",

number = "4",

}

A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications. / Liu, Hong Zhi; Huang, Hou Kuei; Chiu, Ray Jay; Chu, Chen Kuo; Lin, Che Hung; Wang, Chih Cheng; Wang, Yeong-Her; Chang, Ching Hsueh; Wu, Chang Luen; Chang, Chian Sern.

於: Microwave and Optical Technology Letters, 卷 44, 編號 4, 20.02.2005, p. 311-313.

研究成果: Article › 同行評審

TY - JOUR

T1 - A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

AU - Liu, Hong Zhi

AU - Huang, Hou Kuei

AU - Chiu, Ray Jay

AU - Chu, Chen Kuo

AU - Lin, Che Hung

AU - Wang, Chih Cheng

AU - Wang, Yeong-Her

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

PY - 2005/2/20

Y1 - 2005/2/20

N2 - A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.

AB - A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.

UR - http://www.scopus.com/inward/record.url?scp=19944433244&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944433244&partnerID=8YFLogxK

U2 - 10.1002/mop.20620

DO - 10.1002/mop.20620

M3 - Article

AN - SCOPUS:19944433244

VL - 44

SP - 311

EP - 313

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 4

ER -

A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

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