A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

Hong Zhi Liu, Hou Kuei Huang, Ray Jay Chiu, Chen Kuo Chu, Che Hung Lin, Chih Cheng Wang, Yeong-Her Wang, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang

研究成果: Article同行評審

摘要

A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.

原文English
頁(從 - 到)311-313
頁數3
期刊Microwave and Optical Technology Letters
44
發行號4
DOIs
出版狀態Published - 2005 二月 20

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

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