摘要
A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.
原文 | English |
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頁(從 - 到) | 311-313 |
頁數 | 3 |
期刊 | Microwave and Optical Technology Letters |
卷 | 44 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 2005 2月 20 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 原子與分子物理與光學
- 凝聚態物理學
- 電氣與電子工程