A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

Hong Zhi Liu; Hou Kuei Huang; Ray Jay Chiu; Chen Kuo Chu; Che Hung Lin; Chih Cheng Wang; Yeong-Her Wang; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang

doi:10.1002/mop.20620

A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

Hong Zhi Liu, Hou Kuei Huang, Ray Jay Chiu, Chen Kuo Chu, Che Hung Lin, Chih Cheng Wang, Yeong-Her Wang, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang

研究成果: Article › 同行評審

摘要

A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 ^rd-order intercept point is also measured.

原文	English
頁（從 - 到）	311-313
頁數	3
期刊	Microwave and Optical Technology Letters
卷	44
發行號	4
DOIs	https://doi.org/10.1002/mop.20620
出版狀態	Published - 2005 2月 20

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
電氣與電子工程

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10.1002/mop.20620

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title = "A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications",

abstract = "A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.",

author = "Liu, {Hong Zhi} and Huang, {Hou Kuei} and Chiu, {Ray Jay} and Chu, {Chen Kuo} and Lin, {Che Hung} and Wang, {Chih Cheng} and Yeong-Her Wang and Chang, {Ching Hsueh} and Wu, {Chang Luen} and Chang, {Chian Sern}",

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journal = "Microwave and Optical Technology Letters",

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AU - Liu, Hong Zhi

AU - Huang, Hou Kuei

AU - Chiu, Ray Jay

AU - Chu, Chen Kuo

AU - Lin, Che Hung

AU - Wang, Chih Cheng

AU - Wang, Yeong-Her

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

PY - 2005/2/20

Y1 - 2005/2/20

N2 - A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.

AB - A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

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A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

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