A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor

Wen Chian Lai, Huey-Ru Chuang

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.

原文English
主出版物標題2015 IEEE MTT-S International Microwave Symposium, IMS 2015
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479982752
DOIs
出版狀態Published - 2015 七月 24
事件IEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States
持續時間: 2015 五月 172015 五月 22

出版系列

名字2015 IEEE MTT-S International Microwave Symposium, IMS 2015

Other

OtherIEEE MTT-S International Microwave Symposium, IMS 2015
國家United States
城市Phoenix
期間15-05-1715-05-22

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Signal Processing
  • Electrical and Electronic Engineering

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