A 60-GHz Millimeter-wave cmos marchand balun using 0.18-μm cmos technology

C. H. Liu; C. Y. Hsu; H. R. Chuang; C. Y. Chen

doi:10.1002/mop.24176

A 60-GHz Millimeter-wave cmos marchand balun using 0.18-μm cmos technology

C. H. Liu, C. Y. Hsu, H. R. Chuang, C. Y. Chen

電腦與通信工程研究所

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A novel 60-GHz wideband Marchand balun fabricated with a standard 0.18 m six-metal-layer CMOS process for millimeter- wave applications is presented. A technique for achieving good balance with the fourth metal layer microstrip conductor is used in the designed Marchand balun. The fabricated CMOS balun uses multilayer coupling with the top two layers. An output matching network is added to improve the output return loss. The measured amplitude imbalance was about ±1.5 dB from 25 to 65 GHz, over the 89% operating frequency band.

原文	English
頁（從 - 到）	766-770
頁數	5
期刊	Microwave and Optical Technology Letters
卷	51
發行號	3
DOIs	https://doi.org/10.1002/mop.24176
出版狀態	Published - 2009 3月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
電氣與電子工程

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10.1002/mop.24176

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AB - A novel 60-GHz wideband Marchand balun fabricated with a standard 0.18 m six-metal-layer CMOS process for millimeter- wave applications is presented. A technique for achieving good balance with the fourth metal layer microstrip conductor is used in the designed Marchand balun. The fabricated CMOS balun uses multilayer coupling with the top two layers. An output matching network is added to improve the output return loss. The measured amplitude imbalance was about ±1.5 dB from 25 to 65 GHz, over the 89% operating frequency band.

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A 60-GHz Millimeter-wave cmos marchand balun using 0.18-μm cmos technology

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