A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

Chen Kuo Chu; Hou Kuei Huang; Hong Zhi Liu; Che Hung Lin; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang

doi:10.1109/LMWC.2006.890346

A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Che Hung Lin, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

原文	English
頁（從 - 到）	151-153
頁數	3
期刊	IEEE Microwave and Wireless Components Letters
卷	17
發行號	2
DOIs	https://doi.org/10.1109/LMWC.2006.890346
出版狀態	Published - 2007 2月

All Science Journal Classification (ASJC) codes

凝聚態物理學
電氣與電子工程

存取文件

10.1109/LMWC.2006.890346

其它文件與鏈接

引用此

@article{abca11228bb2409dbcddedf2c5e28b34,

title = "A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier",

abstract = "This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.",

author = "Chu, {Chen Kuo} and Huang, {Hou Kuei} and Liu, {Hong Zhi} and Lin, {Che Hung} and Chang, {Ching Hsueh} and Wu, {Chang Luen} and Chang, {Chian Sern} and Wang, {Yeong Her}",

note = "Funding Information: Manuscript received July 17, 2006; revised November 6, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 94-2215-E-006-001, the MOE Program for Promoting Academic Excellence of Universities under Grant A-91E-FA08-1-4, and the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan.",

year = "2007",

month = feb,

doi = "10.1109/LMWC.2006.890346",

language = "English",

volume = "17",

pages = "151--153",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

AU - Chu, Chen Kuo

AU - Huang, Hou Kuei

AU - Liu, Hong Zhi

AU - Lin, Che Hung

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

AU - Wang, Yeong Her

N1 - Funding Information: Manuscript received July 17, 2006; revised November 6, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 94-2215-E-006-001, the MOE Program for Promoting Academic Excellence of Universities under Grant A-91E-FA08-1-4, and the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan.

PY - 2007/2

Y1 - 2007/2

N2 - This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

AB - This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

UR - http://www.scopus.com/inward/record.url?scp=33847765458&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847765458&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2006.890346

DO - 10.1109/LMWC.2006.890346

M3 - Article

AN - SCOPUS:33847765458

VL - 17

SP - 151

EP - 153

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 2

ER -

A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此