A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Che Hung Lin, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

原文English
頁(從 - 到)151-153
頁數3
期刊IEEE Microwave and Wireless Components Letters
17
發行號2
DOIs
出版狀態Published - 2007 二月

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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