摘要
This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.
原文 | English |
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頁(從 - 到) | 151-153 |
頁數 | 3 |
期刊 | IEEE Microwave and Wireless Components Letters |
卷 | 17 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 2007 2月 |
All Science Journal Classification (ASJC) codes
- 凝聚態物理學
- 電氣與電子工程