A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

J. D. Guo, C. I. Lin, M. S. Feng, F. M. Pan, G. C. Chi, C. T. Lee

研究成果: Article同行評審

71 引文 斯高帕斯(Scopus)

摘要

Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm-3. The lowest value for the specific contact resistivity of 6.5×10-5 cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.

原文English
頁(從 - 到)235-237
頁數3
期刊Applied Physics Letters
68
發行號2
DOIs
出版狀態Published - 1996 12月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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