A very simple yet powerful design of a built-in current sensor for CMOS IDDQ testing is presented. Compared with previous methods, this design has lower sensitivity to parameter deviation caused by process or temperature variations. In addition, this design provides scalable sensing resolutions and programmable current reference. Experimental results show that a test response time of less than 2 ns can be acquired when the faulty IDDQ current is higher than 250 //A.
|頁（從 - 到）||133-137|
|期刊||IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing|
|出版狀態||Published - 1998|
All Science Journal Classification (ASJC) codes