A built-in current sensor based on current-mode design

Kuen-Jong Lee, Jing Jou Tang

研究成果: Article

10 引文 (Scopus)

摘要

A very simple yet powerful design of a built-in current sensor for CMOS IDDQ testing is presented. Compared with previous methods, this design has lower sensitivity to parameter deviation caused by process or temperature variations. In addition, this design provides scalable sensing resolutions and programmable current reference. Experimental results show that a test response time of less than 2 ns can be acquired when the faulty IDDQ current is higher than 250 //A.

原文English
頁(從 - 到)133-137
頁數5
期刊IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing
45
發行號1
DOIs
出版狀態Published - 1998 十二月 1

指紋

Sensors
Testing
Temperature

All Science Journal Classification (ASJC) codes

  • Signal Processing
  • Electrical and Electronic Engineering

引用此文

@article{0df8ea46dc864f62b5f5dce2c4810528,
title = "A built-in current sensor based on current-mode design",
abstract = "A very simple yet powerful design of a built-in current sensor for CMOS IDDQ testing is presented. Compared with previous methods, this design has lower sensitivity to parameter deviation caused by process or temperature variations. In addition, this design provides scalable sensing resolutions and programmable current reference. Experimental results show that a test response time of less than 2 ns can be acquired when the faulty IDDQ current is higher than 250 //A.",
author = "Kuen-Jong Lee and Tang, {Jing Jou}",
year = "1998",
month = "12",
day = "1",
doi = "10.1109/82.659464",
language = "English",
volume = "45",
pages = "133--137",
journal = "IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing",
issn = "1057-7130",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - A built-in current sensor based on current-mode design

AU - Lee, Kuen-Jong

AU - Tang, Jing Jou

PY - 1998/12/1

Y1 - 1998/12/1

N2 - A very simple yet powerful design of a built-in current sensor for CMOS IDDQ testing is presented. Compared with previous methods, this design has lower sensitivity to parameter deviation caused by process or temperature variations. In addition, this design provides scalable sensing resolutions and programmable current reference. Experimental results show that a test response time of less than 2 ns can be acquired when the faulty IDDQ current is higher than 250 //A.

AB - A very simple yet powerful design of a built-in current sensor for CMOS IDDQ testing is presented. Compared with previous methods, this design has lower sensitivity to parameter deviation caused by process or temperature variations. In addition, this design provides scalable sensing resolutions and programmable current reference. Experimental results show that a test response time of less than 2 ns can be acquired when the faulty IDDQ current is higher than 250 //A.

UR - http://www.scopus.com/inward/record.url?scp=0031648758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031648758&partnerID=8YFLogxK

U2 - 10.1109/82.659464

DO - 10.1109/82.659464

M3 - Article

AN - SCOPUS:0031648758

VL - 45

SP - 133

EP - 137

JO - IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing

JF - IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing

SN - 1057-7130

IS - 1

ER -