A combinatorial study of metal gate/HfO2 MOSCAPS

M. L. Green, K. S. Chang, I. Takeuchi, T. Chikyow

研究成果: Conference contribution

摘要

Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (ΔVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that compositions containing up to 90% of Ni and Ti, and 75% of Pt were attained in the library. A more negative ΔVfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller work function (Φm) near the Ti-rich corners and higher Φm near Ni- and Pt-rich corners. Measured JL values are consistent with the observed ΔVfb variations. copyright The Electrochemical Society.

原文English
主出版物標題Physics and Technology of High-k Gate Dielectrics 4
發行者Electrochemical Society Inc.
頁面341-350
頁數10
版本3
ISBN(電子)1566775035
DOIs
出版狀態Published - 2006
事件Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico
持續時間: 2006 10月 292006 11月 3

出版系列

名字ECS Transactions
號碼3
3
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting
國家/地區Mexico
城市Cancun
期間06-10-2906-11-03

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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